Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Jonathan J. Wierer Jr."'
Autor:
Syed Ahmed Al Muyeed, Wei Sun, Xiongliang Wei, Renbo Song, Daniel D. Koleske, Nelson Tansu, Jonathan J. Wierer Jr.
Publikováno v:
AIP Advances, Vol 7, Iss 10, Pp 105312-105312-7 (2017)
Data are presented on strain compensation in InGaN-based multiple quantum wells (MQW) using AlGaN interlayers (ILs). The MQWs consist of five periods of InxGa1-xN/AlyGa1-yN/GaN emitting in the green (λ ∼ 535 nm ± 15 nm), and the AlyGa1-yN IL has
Externí odkaz:
https://doaj.org/article/5b63c8f31fe64e49b8424f4fa167da9e
Publikováno v:
AIP Advances, Vol 7, Iss 3, Pp 035212-035212-8 (2017)
Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densiti
Externí odkaz:
https://doaj.org/article/e8f5983f017c4d82b6f718f851067877
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100208- (2023)
Lattice-mismatched Al1-xInxN layers grown on GaN and with varying x are thermally oxidized to understand how alloy content affects the oxidation process and oxide films. The samples are oxidized in a horizontal tube furnace at 830 oC and 900 oC for 2
Externí odkaz:
https://doaj.org/article/3f270a1cbdfb4c28b9d9ebb8ecb5e750
Autor:
Jonathan J. Wierer Jr., Andrew A. Allerman, Erik J. Skogen, Anna Tauke-Pedretti, Gregory A. Vawter, Ines Montaño
Publikováno v:
Applied Physics Express; Jun2015, Vol. 8 Issue 6, p1-1, 1p