Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Jonathan Heffernan"'
Publikováno v:
Applied Physics Letters. 78:754-756
Using gas-source molecular-beam epitaxy, and ammonia as a source of nitrogen, we have investigated the effect of buffer layer preparation on the electrical and optical properties of GaN epilayers. It is found that the buffer layer thickness and buffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a575c5470edb05cb7da7f5ecd433b2
https://doi.org/10.1063/1.1344227
https://doi.org/10.1063/1.1344227
Publikováno v:
Physical Review B. 75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc304f366d71969c0e117dc64584e2a
https://doi.org/10.1103/physrevb.75.129902
https://doi.org/10.1103/physrevb.75.129902
Publikováno v:
SPIE Proceedings.
The growth and fabrication of 405 nm InGaN laser diodes by molecular beam epitaxy (MBE) has made rapid progress over the last three years. In 2004, the authors reported the first MBE-grown nitride laser diodes. In mid-2005 the authors then demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9efd8c2197dc97d3406867be504734c
https://doi.org/10.1117/12.696721
https://doi.org/10.1117/12.696721
Publikováno v:
Physical Review B. 75
We report photoluminescence and time-resolved photoluminescence experiments on ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}∕\mathrm{Ga}\mathrm{N}$ quantum dots grown by plasma-assisted molecular beam epitaxy. We show photoluminescen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33847bf382f786e121b2bb5d1cd67ac4
https://doi.org/10.1103/physrevb.75.045314
https://doi.org/10.1103/physrevb.75.045314
Autor:
P. M. F. J. Costa, Jonathan Heffernan, Colin J. Humphreys, Huixin Xiu, Matthias Kauer, Tim Michael Smeeton, Stewart Edward Hooper
Publikováno v:
MRS Proceedings. 955
This paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f6c2e0d22eaa394b941fd967a7a619e
https://doi.org/10.1557/proc-0955-i04-07
https://doi.org/10.1557/proc-0955-i04-07
Autor:
Katherine L. Johnson, Jonathan Heffernan, C. Zellweger, Valerie Bousquet, S. E. Hooper, Matthias Kauer
Publikováno v:
Novel In-Plane Semiconductor Lasers IV.
Semiconductor nitrides have many applications for optoelectronic devices; particularly, blue-violet laser diodes (LDs) are required for blu-ray optical disc systems. Molecular beam epitaxy (MBE) with its fine control of growth parameters and capabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b4bbcee41b6443c1eb9adc75dd3b97
https://doi.org/10.1117/12.597027
https://doi.org/10.1117/12.597027
Autor:
S.E. Bennett, Rachel A. Oliver, Tim Michael Smeeton, George Davey Smith, David W. Saxey, Colin J. Humphreys, Stewart Edward Hooper, Jonathan Heffernan
Publikováno v:
Journal of Applied Physics. 111:053508
Atom probe tomography (APT) has been used to achieve three-dimensional characterization of a III-nitride laser diode (LD) structure grown by molecular beam epitaxy (MBE). Four APT data sets have been obtained, with fields of view up to 400 nm in dept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be205ad65f3f441c98efe355ed06d11b
https://doi.org/10.1063/1.3692569
https://doi.org/10.1063/1.3692569
Publikováno v:
Japanese Journal of Applied Physics. 48:072102
We report on a method for using aluminium nitride (AlN) as the electrical insulator in ridge waveguide blue-violet laser diodes (LDs). The AlN layer is deposited by molecular beam epitaxy, with good sidewall conformality. The slope efficiency (0.66 W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9f533bed39c56d9c38d417c14c3f1b7
https://doi.org/10.1143/jjap.48.072102
https://doi.org/10.1143/jjap.48.072102
Autor:
Thierry Amand, Jonathan Heffernan, Andrea Balocchi, Xavier Marie, Delphine Lagarde, Stewart Edward Hooper, M. Sénès, Katherine L. Smith
Publikováno v:
Applied Physics Letters. 94:223114
We report on the experimental evidence of the manipulation of the exciton spin in InGaN quantum dots through the application of an external electric field up to room temperature. Furthermore, we have found the exciton spin relaxation to be independen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22808c0c48e525317360b28237dbe141
https://doi.org/10.1063/1.3151823
https://doi.org/10.1063/1.3151823
Autor:
Tim Michael Smeeton, Jonathan Heffernan, Valerie Bousquet, S. E. Hooper, W. S. Tan, Matthias Kauer, M. Rossetti, Jennifer Mary Barnes
Publikováno v:
Electronics Letters. 44:351
InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density of the ridge waveguide laser diodes is 3.6 kA/cm2 and the slope ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c524dd2e9b177feef8b1f3de6de8eb
https://doi.org/10.1049/el:20083456
https://doi.org/10.1049/el:20083456