Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Jonathan Harms"'
Autor:
Andrew Lyle, Jonathan Harms, Todd Klein, August Lentsch, Angeline Klemm, Daniel Martens, Jian-Ping Wang
Publikováno v:
AIP Advances, Vol 1, Iss 4, Pp 042177-042177-11 (2011)
An experimental demonstration utilizing a spintronic input/output (I/O) interface for arrays of closely spaced nanomagnets is presented. The free layers of magnetic tunnel junctions (MTJs) form dipole coupled nanomagnet arrays which can be applied to
Externí odkaz:
https://doaj.org/article/3f5c3652c09c4f9388f7834a5106a6c6
Autor:
Jonathan Harms, Andrew Lyle, Masoud Zabihi, Sachin S. Sapatnekar, Ulya R. Karpuzcu, Yang Lv, Jian-Ping Wang, S. Karen Khatamifard, Zamshed I. Chowdhury
Publikováno v:
IEEE Computer Architecture Letters. 17:42-46
As the overhead of data retrieval becomes forbidding, bringing processor logic to the memory where the data reside becomes more energy-efficient. While traditional CMOS structures are unsuited to the tight integration of logic and memory, emerging sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68e43e5eed68df964540295af4c21604
https://doi.org/10.1109/lca.2017.2751042
https://doi.org/10.1109/lca.2017.2751042
Publikováno v:
Microelectronic Engineering. 130:57-61
Display Omitted We developed a low-cost mask making process for phase-shift lithography.Multiple exposures can be used to obtain sub-150nm elliptical features.Aspect ratio of features is controlled by changing mask angles between exposures.O2 reactiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::715e266e0537a79803ef7d44c83e2af6
https://doi.org/10.1016/j.mee.2014.09.022
https://doi.org/10.1016/j.mee.2014.09.022
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:598-610
This paper explores the scalability of in-plane and perpendicular MTJ based STT-MRAMs from 65 nm to 8 nm while taking into consideration realistic variability effects. We focus on the read and write performances of a STT-MRAM based cache rather than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a43230b6c0193d9cf761dcbbffdab15
https://doi.org/10.1109/jssc.2012.2224256
https://doi.org/10.1109/jssc.2012.2224256
Publikováno v:
IEEE Transactions on Electron Devices. 59:2917-2923
A magnetic tunnel junction-based register with separate read and write paths is proposed in this paper. Analysis of the operation of the circuit is performed, and methods for determining the key parameters of the device are presented. The simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f28670926df52ce08ea7573e2b63711
https://doi.org/10.1109/ted.2012.2211021
https://doi.org/10.1109/ted.2012.2211021
Publikováno v:
IEEE Transactions on Nanotechnology. 11:120-126
Magnetic tunneling junction (MTJ)-based programmable logic devices have been proposed and studied for future reconfigurable and nonvolatile computation devices and systems. Spin transfer torque (STT)-based switching has advantages in device scaling c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32af7861e64f23d8641c4b044cfae5bc
https://doi.org/10.1109/tnano.2011.2158848
https://doi.org/10.1109/tnano.2011.2158848
Autor:
Jian-Ping Wang, B. Glass, Xiaofeng Yao, Jonathan Harms, Andrew Lyle, David J. Lilja, Shruti Patil
Publikováno v:
IEEE Transactions on Magnetics. 47:2970-2973
We investigated magnetic tunnel junction (MTJ)-based circuit that allows direct communication between elements without intermediate sensing amplifiers. Two- and three-input circuits that consist of two and three MTJs connected in parallel, respective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfeaaf525a080b9940f5e04dd6b868e8
https://doi.org/10.1109/tmag.2011.2158527
https://doi.org/10.1109/tmag.2011.2158527
Publikováno v:
IEEE Transactions on Magnetics. 46:2216-2219
We investigated spin-polarized current controlled magnetic tunnel junctions (MTJs) connected with a nano-magnetic channel using micromagnetic simulations. A spin polarized current is used to switch the MTJ and form a domain wall in the nanochannel th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d21225d71b332c24928fd11f81f9fd5
https://doi.org/10.1109/tmag.2010.2045355
https://doi.org/10.1109/tmag.2010.2045355
Publikováno v:
IEEE Transactions on Electron Devices. 57:1425-1430
The electrical behavior of a magnetic tunnel junction (MTJ) using spin-torque-transfer (STT) switching was modeled using a SPICE subcircuit. The subcircuit is a two-terminal device that exhibits the electrical characteristics of an STT-MTJ. These cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abec8c84e51b3900a44533e160c4e1bd
https://doi.org/10.1109/ted.2010.2047073
https://doi.org/10.1109/ted.2010.2047073
Publikováno v:
ICCD
The emerging field of spintronics is undergoing exciting developments with the advances recently seen in spintronic devices, such as magnetic tunnel junctions (MTJs). While they make excellent memory devices, recently they have also been used to acco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::998ad539a4bc3c38df27506672ca867d
https://doi.org/10.1109/iccd.2010.5647611
https://doi.org/10.1109/iccd.2010.5647611