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Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:03C132
Two series of In-rich InGaN films with compositions of ∼25% and ∼35% In, grown over a substrate temperature range from 490 to 620 °C, show how the film properties improve as the growth temperature is lowered below the InN decomposition temperatu