Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jonathan C. D. Hubbard"'
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:03C132
Two series of In-rich InGaN films with compositions of ∼25% and ∼35% In, grown over a substrate temperature range from 490 to 620 °C, show how the film properties improve as the growth temperature is lowered below the InN decomposition temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3ee8bb27be9094d6296ce11fb988be
https://doi.org/10.1116/1.3581870
https://doi.org/10.1116/1.3581870
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2011, Vol. 29 Issue 3, p03C132-1-03C132-5, 5p