Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Jonas Rahlf Hauptmann"'
Autor:
Gemma C. Solomon, Yunqi Liu, Nicolas Bovet, Jakob A. S. Meyer, Martyn Jevric, Tao Li, Søren Petersen, Bo W. Laursen, Henrik G. Kjaergaard, Wenping Hu, Nini E. A. Reeler, Tom Vosch, Erling Thyrhaug, Jonas Rahlf Hauptmann, Rong Wang, Mogens Brøndsted Nielsen, Thomas Bjørnholm, Kasper Nørgaard, Rune Hviid, Jesper Nygård, Xiaohui Qiu, Zhongming Wei
Publikováno v:
Advanced Materials. 25:4164-4170
A new type of solid-state molecular junction is introduced, which employs reduced graphene oxide as a transparent top contact that permits a self-assembled molecular monolayer to be photoswitched in situ, while simultaneously enabling charge-transpor
Autor:
Zhongming Wei, Wenping Hu, Bo W. Laursen, Kasper Nørgaard, Tom Vosch, Jesper Nygård, Nicolas Bovet, Søren Petersen, Jonas Rahlf Hauptmann, Tao Li, Yunqi Liu, Thomas Bjørnholm
Publikováno v:
Advanced Materials. 24:1333-1339
A novel method using solution-processed ultrathin chemically derived graphene films as soft top contacts for the non-destructive fabrication of molecular junctions is demonstrated. We believe this protocol will greatly enrich the solid-state test bed
Publikováno v:
Nano Letters. 4:349-352
To take advantage of nanoscale molecular electronic components in semiconductor technology, there will be a desire to integrate new elements such as one-dimensional (1D) carbon nanotubes in conventional 2D or 3D semiconductor systems. We report on hy
Publikováno v:
Physical Review B. 91
The authors introduce an approach to investigate the spatial distribution of the electrons in InAs nanowires using the anisotropy of low temperature magneto-conduction fluctuations. With this technique, the authors argue that the electrons responsibl
Publikováno v:
Hauptmann, J R, Paaske, J & Lindelof, P E 2008, ' Electric-field controlled spin reversal in a quantum dot with ferromagnetic contacts ', Nature Physics, vol. 4, no. 5, pp. 373-376 . https://doi.org/10.1038/nphys931
Nature Physics
Nature Physics
Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as well as fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8356dd01e50c9934dbbe4f292d130d14
https://curis.ku.dk/portal/da/publications/electricfield-controlled-spin-reversal-in-a-quantum-dot-with-ferromagnetic-contacts(f4fef170-bebc-11dc-bee9-02004c4f4f50).html
https://curis.ku.dk/portal/da/publications/electricfield-controlled-spin-reversal-in-a-quantum-dot-with-ferromagnetic-contacts(f4fef170-bebc-11dc-bee9-02004c4f4f50).html
Publikováno v:
Physical Review B. 72
We present two-terminal magnetotransport measurements on single-wall carbon nanotube devices, where one or two of the terminals are ferromagnetic. Both ferromagnetic semiconductor [(Ga,Mn)As] and metal (Fe) contact materials have been investigated. I
Publikováno v:
AIP Conference Proceedings.
During a growth interrupt single wall carbon nanotubes (SWCNT) are incorporated in a Molecular Beam Epitaxy (MBE) grown semiconductor heterostructure. This is used to contact SWCNT with one and two ferromagnetic electrodes made of the diluted ferroma
Publikováno v:
University of Copenhagen
Single‐wall nanotubes are encapsulated in a semiconductor structure by Molecular Beam Epitaxy (MBE) of GaAlAs and GaMnAs. Microprocessing is used to form a field‐effect transistor geometry, where the nanotube channel is supported on a bandgap eng
Autor:
Wenping Hu, Yunqi Liu, Zhongming Wei, Jonas Rahlf Hauptmann, Bo W. Laursen, Thomas Bjørnholm, Nicolas Bovet, Tom Vosch, Kasper Nørgaard, Jesper Nygård, Søren Petersen, Tao Li
Publikováno v:
Advanced Materials. 24:1281-1281
Autor:
Per Hedegård, Jonas Rahlf Hauptmann, Thomas Bjørnholm, Tao Li, Bo W. Laursen, Kasper Nørgaard, Jesper Nygård, Søren Petersen
Publikováno v:
Physical Chemistry Chemical Physics. 14:14277
The transversal conductance through thin multi-layered films of reduced graphene oxide was studied as a function of temperature in a solid-state device setup designed for molecular electronic measurements. Upon cooling to cryogenic temperatures, the