Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Jonas Heidler"'
Autor:
Jonas Heidler, Saleem Anwar, Kamal Asadi, Klaus Müllen, Hao Lu, Ahmar Hasnain, Morteza Hassanpour Amiri
Publikováno v:
RSC Advances
Doping-free transfer of graphene produced by catalytic chemical vapor deposition (CVD) on copper foil, is still a technical challenge since unintentional doping of the transferred graphene layer yields an uncontrolled shift of Dirac point in graphene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17e6fa99a6562891890937353e801207
https://doi.org/10.1039/c9ra06738h
https://doi.org/10.1039/c9ra06738h
Publikováno v:
ACS Applied Electronic Materials. 2:2-8
Despite the great progress of ferroelectric gated field-effect transistors (Fe-FETs) based on graphene and other 2D materials, a device model that accurately describes the hysteretic transfer chara...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f6b870d99b63a0df73531a443b15a2
https://doi.org/10.1021/acsaelm.9b00532
https://doi.org/10.1021/acsaelm.9b00532
Publikováno v:
Advanced Functional Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0aa2f9eb343f56481571c724d1dc77f
https://hdl.handle.net/21.11116/0000-0006-84DD-C21.11116/0000-0006-84DF-A
https://hdl.handle.net/21.11116/0000-0006-84DD-C21.11116/0000-0006-84DF-A
Autor:
Tim Gruene, Guido H. Clever, Christan Zaubitzer, Sacha De Carlo, Elisabeth Müller, Julian T. C. Wennmacher, Teng Li, Gunther Steinfeld, Ariane Fecteau-Lefebvre, Irene Regeni, Radosav S. Pantelic, Kenneth N. Goldie, Stephan Handschin, Jeroen A. van Bokhoven, Jonas Heidler, Gustavo Santiso-Quiñones, Julian J. Holstein, Eric van Genderen
Publikováno v:
Angewandte Chemie. 130:16551-16555
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf5ddd14149fcb8bb08ad6749327d80f
https://doi.org/10.1002/ange.201811318
https://doi.org/10.1002/ange.201811318
Publikováno v:
Solid-State Electronics. 144:90-94
Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1deb42111588349c883c7cb3adfe4c99
https://doi.org/10.1016/j.sse.2018.03.008
https://doi.org/10.1016/j.sse.2018.03.008
Autor:
Sacha De Carlo, Christian Zaubitzer, Radosav S. Pantelic, Julian T. C. Wennmacher, Tim Gruene, Julian J. Holstein, Jonas Heidler, Kenneth N. Goldie, Elisabeth Müller, Eric van Genderen, Ariane Fecteau-Lefebvre
Publikováno v:
Acta Crystallographica Section D: Structural Biology, 75 (5)
Acta Crystallographica. Section D, Structural Biology
Acta Crystallographica. Section D, Structural Biology
3D electron diffraction has reached a stage where the structures of chemical compounds can be solved productively. Instrumentation is lagging behind this development, and to date dedicated electron diffractometers for data collection based on the rot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e94e2ae7422b6c84496d74ff7cb8d958
https://hdl.handle.net/20.500.11850/342844
https://hdl.handle.net/20.500.11850/342844
Autor:
Klaus Müllen, Jonas Heidler, Kamal Asadi, Gunnar Glasser, Hao Lu, Rüdiger Berger, Dago M. de Leeuw, Maria C. Morant-Miñana, Nerea Gil-González
Publikováno v:
Materials Horizons
Materials Horizons, 5(6)
Materials Horizons, 5(6)
Re-establishment of electrical conductivity in graphene oxide (GO), the insulating form of graphene, is (partially) accomplished by reduction through high temperature treatments in a reducing atmosphere, or using strongly reducing chemicals or electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7f754d9e6787315d30dad38591a7f4a
http://resolver.tudelft.nl/uuid:69a6629a-b018-4115-8cf4-44310a2cedaf
http://resolver.tudelft.nl/uuid:69a6629a-b018-4115-8cf4-44310a2cedaf
Autor:
Julian T. C. Wennmacher, Jonas Heidler, Irene Regeni, Sacha De Carlo, Teng Li, Gustavo Santiso-Quiñones, Elisabeth Müller, Kenneth N. Goldie, Stephan Handschin, Julian J. Holstein, Eric van Genderen, Tim Gruene, Jeroen A. van Bokhoven, Guido H. Clever, Ariane Fecteau-Lefebvre, Gunther Steinfeld, Christian Zaubitzer, Radosav S. Pantelic
Publikováno v:
Angewandte Chemie / International edition International edition 57(50), 16313-16317 (2018). doi:10.1002/anie.201811318
Angewandte Chemie (International Ed. in English)
Angewandte Chemie. International Edition, 130 (50)
Angewandte Chemie. International Edition, 57 (50)
Angewandte Chemie (International Ed. in English)
Angewandte Chemie. International Edition, 130 (50)
Angewandte Chemie. International Edition, 57 (50)
Derzeit publizieren Chemiker aller Fachrichtungen ca. 50 000 Kristallstrukturen pro Jahr, von denen es sich bei der überwältigenden Mehrheit um Röntgenstrukturen handelt. Wir setzen Elektronen‐ statt Röntgenbeugung ein, um die Struktur zweier m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e2dfce941320c1c7c19eab8c85d65ab
https://bib-pubdb1.desy.de/record/417341
https://bib-pubdb1.desy.de/record/417341
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 34:041601
A method for measuring the thermal accommodation coefficient α for surface-/gas interfaces is presented. It allows the determination of α for thin films produced by a variety of deposition technologies, such as chemical vapor deposition, physical v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3ebdb4a4da6131335efa60750cd3b99
https://doi.org/10.1116/1.4948527
https://doi.org/10.1116/1.4948527