Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Jonas Haunschild"'
Autor:
Henri Johannes Vahlman, Saed Al-Hajjawi, Jonas Haunschild, Nico Wohrle, Maxi Richter, Lukas Jablonka, Hans Schremmer, Stefan Rein
Manufacture of photovoltaic silicon wafers through epitaxy directly from the vapor phase with the so-called sintered porous silicon method holds significant cost-saving potential compared with the traditional ingot growth and subsequent multiwire saw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d98bb7cc216028b8fda716fa5023a8e
https://publica.fraunhofer.de/handle/publica/426993
https://publica.fraunhofer.de/handle/publica/426993
Autor:
Juliane Broisch, Thomas Brox, Oliver Anspach, Sven Wasmer, Matthias Demant, Kirsten Sunder, Jonas Haunschild, Theresa Strauch, Stefan Rein, Hannes Höffler
Publikováno v:
Progress in Photovoltaics: Research and Applications. 24:1533-1546
Publikováno v:
AIP Conference Proceedings.
Recombination-active defects e.g. dislocations in multicrystalline silicon (mc-Si) wafers impact the quality of solar cells. These defects can be quantified during the incoming control of silicon wafers with Photoluminescence (PL) imaging and used to
Autor:
Wilhelm Warta, Jonas Haunschild, Stefan Rein, Juliane Broisch, Jonas Schön, Martin C. Schubert, Tim Niewelt
Publikováno v:
Solid State Phenomena. 242:102-108
We present new experimental data on light-induced degradation due to the boron oxygen defect in compensatedn-type silicon. We are the first to show that both defect components known fromp-type silicon are formed in compensatedn-type silicon. A parame
The measurement of bulk lifetime values of as-cut wafers is a problematic issue. In this work, a MDPLinescan tool was directly integrated in the last stage of an inline wet chemistry tool. It is shown that running as-cut wafers through a bath of 5% H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ce82c1760c0f808bf3a112a995e0cfa
https://publica.fraunhofer.de/handle/publica/251238
https://publica.fraunhofer.de/handle/publica/251238
Autor:
Andreas Bergmann, Hans Schremmer, Andreas Brand, Hannes Höffler, Georg Dost, Jonas Haunschild
In this contribution we compare the results of a line-scanning camera and line-wise illumination based PL-imaging system (Line-PLI) to the results of a “classic” PL-imaging system featuring a matrix camera and a full area illumination of the wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a72d5dad7e7a57f924d33119f4ff80a8
https://publica.fraunhofer.de/handle/publica/251204
https://publica.fraunhofer.de/handle/publica/251204
Autor:
Nico Wöhrle, Hasan Al-Mohtaseb, Hannes Höffler, Jonas Haunschild, Bernhard Michl, Martin Kasemann
Publikováno v:
Energy Procedia. 55:85-93
For the extraction of spatially resolved solar cell parameters, a variety of methods has been introduced in the past years. Nearly all methods use the fact that the local luminescence intensity can be calibrated to local junction voltage. The differe
Autor:
Jonas Haunschild, Teodora Chipei, Michael Linse, Isolde E. Reis, Matthias Demant, Benjamin Thaidigsmann, Stefan Rein
Publikováno v:
Solar Energy Materials and Solar Cells. 106:71-75
Photoluminescence (PL) imaging is a promising characterization technique for rating and sorting of multicrystalline silicon (mc-Si) as-cut wafers concerning to their material quality. It is inline applicable and yields high resolution images showing
Publikováno v:
Solar Energy Materials and Solar Cells. 105:159-166
Acidic texturing of multi crystalline silicon (mc-Si) wafers often leads to rough surfaces with areas of strong etch attacks which we call trench structures. Particularly at sites containing crystal defects such as grain boundaries and dislocations,
Publikováno v:
Progress in Photovoltaics: Research and Applications. 21:1634-1639
Wafer quality is extremely important in determining yield and efficiency of solar cells. Ideally, this wafer quality should be determined for incoming wafers before solar cell fabrication based on the electronic quality of the wafers. Recent papers h