Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jon T. Fitch"'
Autor:
Jon T. Fitch
Publikováno v:
Journal of The Electrochemical Society. 141:1046-1055
Selective silicon processing at 775 and 850°C using an based chemistry was studied. The selectivity of each experimental condition was quantified by measuring the silicon nuclei density/cm2 on large blanket areas of . The morphology of the selective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::096caed7e6af35f68907c95db039fe0b
https://doi.org/10.1149/1.2054839
https://doi.org/10.1149/1.2054839
Publikováno v:
IEEE Transactions on Electron Devices. 39:1711-1716
A self-aligned bipolar structure, which features a nonrecessed base and a selectively deposited polysilicon emitter, is proposed. The in situ surface cleaning process prior to the selective-polysilicon deposition minimizes the residual native oxide i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de0cf4ff27d63f362288f89109a432f1
https://doi.org/10.1109/16.141238
https://doi.org/10.1109/16.141238
Autor:
K. Barla, Carlos A. Mazure, Dean J. Denning, M. Haond, Craig D. Gunderson, B. Piot, Jon T. Fitch, A. Straboni
Publikováno v:
Microelectronic Engineering. 15:479-482
During selective epitaxial Si growth the wafers are exposed to a H 2 rich atmosphere. The impact of high temperature hydrogen prebake, typical of selective Si epitaxial processes, on thin dielectrics is investigated. A prebake temperature range of 85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27593c3b8ecc4b60f45c3ac6181bc011
https://doi.org/10.1016/0167-9317(91)90268-i
https://doi.org/10.1016/0167-9317(91)90268-i
Publikováno v:
Journal of The Electrochemical Society. 140:L113-L115
Surface charge analysis (SCA) is a novel technique which utilizes the surface photovoltage (SPV) effect to measure depletion layer widths in silicon. It is demonstrated to be a superior alternative to capacitance-voltage (CV) measurements for the det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3e305d84bb3f7b52604e8082a68372e
https://doi.org/10.1149/1.2220781
https://doi.org/10.1149/1.2220781
Autor:
Wayne M. Paulson, W. A. McGahan, Philip J. Tobin, John A. Woollam, Rama I. Hegde, B. B. Doris, Jon T. Fitch, Vidya Kaushik
Publikováno v:
MRS Proceedings. 355
The nucleation and growth of in situ doped, LPCVD silicon films was analyzed using atomic force microscopy, variable-angle spectroscopie ellipsometry, and transmission electron microscopy. The RMS surface roughness initially increases from 0.5 to 5.7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da2de18c888262c5e0174de9509a9d9e
https://doi.org/10.1557/proc-355-77
https://doi.org/10.1557/proc-355-77
Autor:
Dean J. Denning, Jon T. Fitch
Publikováno v:
MRS Proceedings. 259
Low temperature selective silicon epitaxy was studied over a range of process pressures and HCI flows using a SiH2Cl2/HCl/H2based chemistry. Thermodynamic modelling was carried out with the aid of the SOLGAS program to investigate the effect of proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0351afa7eae78df7ba3cf4d27ecfb78
https://doi.org/10.1557/proc-259-517
https://doi.org/10.1557/proc-259-517
Autor:
Jon T. Fitch
Publikováno v:
MRS Proceedings. 259
Surface Charge Analysis (SCA), and ellipsometry have been used to study the stability over time of HF treated (100) silicon surfaces as a function of the post-HF rinse time. Using SCA, the electrical properties of the chemical terminating layer of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5c75dc69ccd52caca5096d48a127c78
https://doi.org/10.1557/proc-259-427
https://doi.org/10.1557/proc-259-427
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