Zobrazeno 1 - 10
of 162
pro vyhledávání: '"Jon Scholl"'
Autor:
Eric Udelhoven, Joshua Baur, Adam R. Waite, Daniel Brooks, John Kelley, Yash Patel, Richard Ott, Jon Scholl, Glen D. Via, Adam G. Kimura
This paper presents the first design reconstruction on the Front-End-of-Line and Middle-of-Line layers of a 14 nm node FinFET design. To accomplish this, a large region of interest within a custom designed 14 nm node ASIC device was delayered, imaged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f134dd8b0b6196cf1a1d4a3926447c9
https://doi.org/10.36227/techrxiv.15182256
https://doi.org/10.36227/techrxiv.15182256
Autor:
Andrew Elliott, James Schaffranek, Matthew Sutter, Mike Strizich, Adam G. Kimura, Glen D. Via, Jon Scholl
Publikováno v:
Journal of Hardware and Systems Security. 4:34-43
This paper reviews a developed integrated circuit (IC) decomposition workflow that can be leveraged for extracting design files and performing advanced verification and validation techniques on fabricated chips. In this work, a commercial 130-nm micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac678ac41e1b3af4330e38085cbddf7f
https://doi.org/10.1007/s41635-019-00086-6
https://doi.org/10.1007/s41635-019-00086-6
Publikováno v:
2020 IEEE Physical Assurance and Inspection of Electronics (PAINE).
This paper reviews the decomposition of a fabricated Serial Peripheral Interface (SPI) that was manufactured in a 130 nm process node technology to establish a verification and validation methodology for baselining microelectronics assurance. The fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2df2d520becf265f302921fa56e37a
https://doi.org/10.1109/paine49178.2020.9337733
https://doi.org/10.1109/paine49178.2020.9337733
Publikováno v:
High Plains Journal; 2/18/2013, Vol. 131 Issue 7, p13-13, 1/6p
Autor:
James E. Toney, Sri Sriram, Vincent Stenger, James R. Busch, Jon Scholl, Peter Pontius, Andrea Pollick
Publikováno v:
SPIE Proceedings.
This paper reports on the development of thin film lithium niobate (TFLN™) electro-optic devices at SRICO. TFLN™ is formed on various substrates using a layer transfer process called crystal ion slicing. In the ion slicing process, light ions suc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b530f04b87defb7fefac0ecbb148b63
https://doi.org/10.1117/12.2004623
https://doi.org/10.1117/12.2004623
Autor:
Sassan Sheikholeslami, Jennifer A. Dionne, Hadiseh Alaeian, Jon Scholl, Aitzol García-Etxarri, Ai Leen Koh, Ashwin C. Atre
Publikováno v:
CLEO: 2013.
We explore optical-frequency quantum and magnetic plasmon modes. Our results demonstrate the quantum-to-classical transition in individual nanoparticles and in nanoparticle dimers, as well as the emergence of optical-frequency magnetism in a metamate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6baa2e4aa5b528c9b525eff5488c3d5e
https://doi.org/10.1364/cleo_qels.2013.qf1a.1
https://doi.org/10.1364/cleo_qels.2013.qf1a.1
Autor:
James R. Busch, Sri Sriram, Vincent Stenger, James E. Toney, Jon Scholl, Andrea Pollick, Peter Pontius
Publikováno v:
CLEO: 2013.
This paper reports the demonstration of a high-speed electro-optic modulator in crystal ion sliced thin film lithium niobate (TFLN™). Experimental results indicate potential to realize a 100 GHz TFLN™ modulator at 1550 nm with V π = 2.5V.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aa444746057dd935f25dd7f7aff8486
https://doi.org/10.1364/cleo_si.2013.cw3o.3
https://doi.org/10.1364/cleo_si.2013.cw3o.3
Autor:
Jon Scholl, Peter Pontius, Huihui Lu, Neil Smith, Vincent Stenger, Andrea Pollick, Sri Sriram, Benattou Sadani, Maria-Pilar Bernal, James E. Toney
Publikováno v:
Photonic Microdevices/Microstructures for Sensing IV.
We report on photonic crystal electro-optic devices formed in engineered thin film lithium niobate (TFLN™) substrates. Photonic crystal devices previously formed in bulk diffused lithium niobate waveguides have been limited in performance by the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aeef9e4c2ea047e83d2074dc44bbbcb
https://doi.org/10.1117/12.920611
https://doi.org/10.1117/12.920611
Autor:
Sri Sriram, James R. Busch, Vincent Stenger, Jon Scholl, James E. Toney, Peter Pontius, Andrea Pollick
Publikováno v:
European Conference and Exhibition on Optical Communication.
This paper reports the first demonstration of a high-speed electro-optic modulator in crystal ion sliced thin film lithium niobate (TFLN™). The device exhibits a Vπ·L of 4.75 V·cm, 8dB RF loss at 65 GHz and 40 GHz electro-optic bandwidth.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a5d415d0d835f636eb5b2b7792f278
https://doi.org/10.1364/eceoc.2012.tu.3.e.4
https://doi.org/10.1364/eceoc.2012.tu.3.e.4