Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Jon Maimon"'
Publikováno v:
IEEE Transactions on Nuclear Science. 50:1878-1884
The chalcogenide material used for phase-change applications in rewritable optical storage (Ge/sub 2/Sb/sub 2/Te/sub 5/) has been integrated with a 0.5-/spl mu/m radiation-hardened CMOS process to produce 64-Kbit memory arrays. On selected arrays, el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::427947036566b1c8f694d7510af4fa61
https://doi.org/10.1109/tns.2003.821377
https://doi.org/10.1109/tns.2003.821377
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1836-1840
Shallow trench isolation (STI) is rapidly replacing LOCOS (LOCal Oxidation of Silicon) as the device isolation process of choice. However, little work has been done to characterize the radiation-hardness capability of devices built with STI. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b257bd6a2b7942dfd4271c3d99da2e34
https://doi.org/10.1109/23.819162
https://doi.org/10.1109/23.819162
Publikováno v:
2010 IEEE Aerospace Conference.
BAE Systems has developed a 4Mb Non-Volatile Chalcogenide Random Access Memory (C-RAM) optimized for the radiation environments encountered in spacecraft applications. C-RAM is a phase change memory with a unique combination of features that collecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76448c24506b03f49aed059ee1f0eb5
https://doi.org/10.1109/aero.2010.5446662
https://doi.org/10.1109/aero.2010.5446662
Autor:
Bin Li, G.F. Michael, S. Ramaswamy, K.K. Hunt, T.J. Conway, Jon Maimon, L. Burcin, A. Bumgarner, John C. Rodgers
Publikováno v:
2005 IEEE Aerospace Conference.
During the first stage of a multi-year research program, BAE SYSTEMS and Ovonyx have designed, fabricated and tested a series of test chips to demonstrate full integration of a chalcogenide-based non-volatile memory element into a radiation hardened
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1215b5cf03681036ce23c7f59c7b30d
https://doi.org/10.1109/aero.2005.1559546
https://doi.org/10.1109/aero.2005.1559546
Publikováno v:
2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720).
We report on the progress of a recent addition to non-volatile solid state memory technologies suited for space and other ionizing radiation environments. We summarize the material and processing science behind the current generation of chalcogenide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::961c60905943922c9a77a858dd46ea00
https://doi.org/10.1109/aero.2004.1368025
https://doi.org/10.1109/aero.2004.1368025
Publikováno v:
2003 IEEE Aerospace Conference Proceedings (Cat. No.03TH8652).
BAE SYSTEMS in Manassas, Virginia, and Ovonyx, Inc., have previously reported electrical test results fiom stand-alone single-bit chalcogenide memories. In this paper we present a description of two test chips, one that has been used to integrate the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::443e3c1af8b510cd01ddc25f2b3ea801
https://doi.org/10.1109/aero.2003.1235161
https://doi.org/10.1109/aero.2003.1235161
Publikováno v:
2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542).
Chalcogenide is a proven phase change material used in re-writeable CDs and DVDs. This material changes phases, reversibly and quickly, between an amorphous state that is dull in appearance and electrically high in resistance, and a polycrystalline s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc1b98351b1bcefc5a3fd238f57d8cf
https://doi.org/10.1109/aero.2001.931188
https://doi.org/10.1109/aero.2001.931188