Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jon E. Bratvold"'
Autor:
Henrik H. Sønsteby, Erik Skaar, Øystein S. Fjellvåg, Jon E. Bratvold, Helmer Fjellvåg, Ola Nilsen
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C,
Externí odkaz:
https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
Autor:
Helmer Fjellvåg, Jon E. Bratvold, Henrik Hovde Sønsteby, Øystein Fjellvåg, Erik Skaar, Ola Nilsen
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Nature Communications
Nature Communications
As traditional silicon technology is moving fast towards its fundamental limits, all-oxide electronics is emerging as a challenger offering principally different electronic behavior and switching mechanisms. This technology can be utilized to fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::feed6ca39518ffc4faa29e5b1ebd5a80
https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
Autor:
Jon E. Bratvold, Jeffrey W. Elam, John W. Freeland, Henrik Hovde Sønsteby, Angel Yanguas-Gil, Helmer Fjellvåg, Erik Skaar, Ola Nilsen
Publikováno v:
Journal of Materials Chemistry C. 8:12662-12668
Resistors are essential parts of futuristic all-oxide electronic architectures, yet easily overlooked due to their apparent simplicity. Herein, design of thin films with specific resistance spanning six orders of magnitude by partial substitution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f3101d73ec65ca754c0fe19c9899cd
https://doi.org/10.1039/d0tc03406a
https://doi.org/10.1039/d0tc03406a
Autor:
Devika Choudhury, Henrik Hovde Sønsteby, Helmer Fjellvåg, Veronica Anne-Line Kathrine Killi, Jon E. Bratvold, Ola Nilsen, Jeffrey W. Elam
Alkali metal containing materials have become increasingly attractive in a world hunting for sustainable energy materials and green functional devices. Lithium- and sodium battery technology, lead-free piezo- and ferroelectric devices, and record-bre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32b0722e0bab3d06e031002b15a782ce
http://hdl.handle.net/10852/82510
http://hdl.handle.net/10852/82510
Publikováno v:
Chemistry of Materials. 30:1095-1101
Perovskite-related layered cuprates are considered the basis of all high-Tc superconductors. Considerable effort has been put into understanding these materials. Deposition of phase-pure and oriented thin films can help shed light on the unusual inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db24af116417be56019ab769587ebd9b
https://doi.org/10.1021/acs.chemmater.7b05005
https://doi.org/10.1021/acs.chemmater.7b05005
The authors here report epitaxial growth of the ferrimagnet NixFe3–xO4 (NFO) by atomic layer deposition at low temperatures. Films grow epitaxially at a reactor temperature of 250 °C and require no further postannealing treatment. (100)-, (110)-,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afda4a9889dd2c70b3e475dc5535f0c5
http://hdl.handle.net/10852/77968
http://hdl.handle.net/10852/77968
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 46(46)
The application range for atomic layer deposition (ALD) has now been extended to include the deposition of rubidium-containing films, enabling the deposition of new and exploratory types of compounds by ALD. The properties of rubidium t-butoxide as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6814eca8ea6acc89d7e0f6d9843b842b
https://pubmed.ncbi.nlm.nih.gov/29130089
https://pubmed.ncbi.nlm.nih.gov/29130089
Publikováno v:
Applied Surface Science. 311:478-483
The combination of the two well behaved binary oxide ALD processes, NiO (Ni(acac) 2 + O 3 ) and (TiO 2 (TiO i Pr) 4 + H 2 O), provide excellent means for depositing thin films of Ni x Ti 1− x O y with highly controllable stoichiometry. In particula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afe797ec3de0d10b235ae48322766dc5
https://doi.org/10.1016/j.apsusc.2014.05.092
https://doi.org/10.1016/j.apsusc.2014.05.092
Autor:
Janne Haapanen, Isabel M. Coelhoso, Mikko Tuominen, Vítor D. Alves, Jyrki M. Mäkelä, Ola Nilsen, Ana Rita Ferreira, Jon E. Bratvold
Publikováno v:
International journal of biological macromolecules. 103
Plasma deposition, liquid flame spray (LFS) and atomic layer deposition (ALD) were used to form inorganic coatings in new exopolysaccharide (FucoPol) biodegradable films. Coated films were characterised in terms of surface, optical and barrier proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cc63a497fa39e511e223dd4ee783c9f
https://pubmed.ncbi.nlm.nih.gov/28499944
https://pubmed.ncbi.nlm.nih.gov/28499944
Autor:
Ching-Yang Chen, Wei Wei, Deli Wang, Cesare Soci, Shadi A. Dayeh, David P. R. Aplin, Xinyu Bao, Jon E. Bratvold, Karen L. Kavanagh, Darija Susac
Publikováno v:
Nano Letters. 8:3755-3760
Epitaxial growth of vertical GaAs nanowires on Si (111) substrates is demonstrated by metal−organic chemical vapor deposition via a vapor−liquid−solid growth mechanism. Systematic experiments indicate that substrate pretreatment, pregrowth allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dacad7c907732c40a8e8fe50c5bc4507
https://doi.org/10.1021/nl802062y
https://doi.org/10.1021/nl802062y