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Electrical properties of n-Zn0.94Cd0.06O/p-SiC heterostructures

Autor: Shtepliuk, I., Khranovskyy, V., Lashkarev, G., Khomyak, V., Lazorenko, V., Ievtushenko, A., Syväjärvi, M., Jokubavicius, V., Yakimova, R.

Publikováno v: In Solid State Electronics March 2013 81:72-77

Effects of source material on epitaxial growth of fluorescent SiC

Autor: Jokubavicius, V., Hens, P., Liljedahl, R., Sun, J.W., Kaiser, M., Wellmann, P., Sano, S., Yakimova, R., Kamiyama, S., Syväjärvi, M.

Publikováno v: In Thin Solid Films 1 November 2012 522:7-10

Investigation of photoluminescence emission in Al-N co-doped 6H-SiC by temperature-dependent measurements

Autor: Tarekegne, A. T., Norrman, K., Jokubavicius, V., Syväjärvi, M., Schuh, P.

Publikováno v: Tarekegne, A T, Norrman, K, Jokubavicius, V, Syväjärvi, M & Schuh, P 2018, ' Investigation of photoluminescence emission in Al-N co-doped 6H-SiC by temperature-dependent measurements ', 12th European Conference on Silicon Carbide and Related Materials, Birmingham, United Kingdom, 02/09/2018-06/09/2018 .

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1202::eeef8034f6ff0606d96cdfef60d886e5
https://orbit.dtu.dk/en/publications/9d314d07-e017-46ab-bb47-c7faa9a0832f

Ligand Hyperfine Interactions at Silicon Vacancies in 4H-SiC

Autor: T. Son, N., Stenberg, P., Jokubavicius, V., Ohshima, Takeshi, U. Hassan, J., G Ivanov, I.

Publikováno v: Journal of Physics: Condensed Matter. 31:195501

The negative silicon vacancy (Vsi ) in SiC has recently emerged as a promising defect for quantum technologies. However, its electronic structure has not yet fully characterized. Although the isolated Si vacancy might be only two paramagnetic centers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::278551e1f2ffcee17c5efa9ce59b23cb
https://repo.qst.go.jp/records/74877