Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Joke Van Aelst"'
Autor:
L. Carbonell, Mikhail R. Baklanov, Hugo Bender, Joke Van Aelst, Karen Maex, Guido Groeseneken, Olivier Richard, Zsolt Tokei, Yunlong Li
Publikováno v:
Semiconductor Science and Technology. 22:320-325
During Cu/low-k damascene integration, plasma ash can introduce a thin modified layer on the trench sidewall of low-k dielectrics. This plasma ash modified layer can influence the time-dependent dielectric breakdown (TDDB) lifetime distribution. In t
Autor:
Dirk Franco, Heidi Van den Rul, Inge I. Maes, Joke Van Aelst, Lucien Van Poucke, Jules Mullens, Steven Mullens, Jan Yperman
Publikováno v:
Analytica Chimica Acta. 395:143-155
The atmospheric pressure-temperature programmed reduction (AP-TPR) has become an established and reliable method amongst the different sulphur characterisation techniques for solid materials, like coal and coal derived products, rubber and clay. The
Publikováno v:
ResearcherID
Assigning related medieval manuscripts to different workshops on the basis of codicological characteristics, is not straightforward. We present the first attempt to distinguish between scriptoria by means of a large-scale total reflection X-ray fluor
Autor:
Herbert Struyf, M. Van Hove, Karen Maex, A. Shiota, Michele Stucchi, Joke Van Aelst, Iwan Vervoort, Hugo Bender, T. Kokubo, I. Vos, M. Maenhoudt, Werner Boullart, A. Das, Yukiko Furukawa, W. Peterson, S. Vanhaelemeersch, Zsolt Tokei, Francesca Iacopi, Marc Schaekers
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
The feasibility of integrating low-k spin-on dielectrics into a Cu damascene structure using JSR's LKD-5109 (k = 2.2) has been investigated. The chemical vapor deposited embedded etch-stop (ES) and dual hard-mask (HM) are replaced by JSR's spin-on di
Autor:
Mikhail R. Baklanov, Karen Maex, Nancy Heylen, Ivan Ciofi, L. Carbonell, Joke Van Aelst, Yunlong Li, Zsolt Tőkei, Guido Groeseneken
Publikováno v:
Journal of Applied Physics. 104:034113
We investigated plasma treatment induced water absorption in a SiOCH low-k dielectric and the influence of the absorbed water components on the low-k dielectric reliability. By using thermal desorption spectroscopy (TDS), water absorption in SiOCH wa