Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Johnson, Bayard K."'
Autor:
Lauermann, Thomas, Herguth, Axel, Scholz, Sascha, Hahn, Giso, Ostrom, Nels P., Johnson, Bayard K., Jung, Woon-Hong, Haverkamp, Helge, Schmid, Christian
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 2002-2005
Boron doped Czochralski-wafers for industrial solar cells are negatively
Boron doped Czochralski-wafers for industrial solar cells are negatively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0aee52dbfbc291125a5c003b909bd52
Autor:
McCallum, Kirk D., Brock, Alexander W., Banan, Mohsen, Falster, Robert J., Holzer, Joseph C., Johnson, Bayard K., Bum Kim, Chang, Kimbel, Steven L., Lu, Zheng, Metti, Paolo, Voronkov, Vladimir V., Mule Stagno, Luciano, Libbert, Jeffrey L.
The present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3549::50f975f75389a1c378e7677eaa8487c3