Výsledky vyhledávání - "Johns, James E."

Report

Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

Autor: Jariwala, Deep, Sangwan, Vinod K., Late, Dattatray J., Johns, James E., Dravid, Vinayak P., Marks, Tobin J., Lauhon, Lincoln J., Hersam, Mark C.

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated singl

Externí odkaz: http://arxiv.org/abs/1304.5567

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Report

Quantitatively Enhanced Reliability and Uniformity of High-{\kappa} Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers

Autor: Sangwan, Vinod K., Jariwala, Deep, Filippone, Stephen A., Karmel, Hunter J., Johns, James E., Alaboson, Justice M. P., Marks, Tobin J., Lauhon, Lincoln J., Hersam, Mark C.

The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-{\kappa} top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which

Externí odkaz: http://arxiv.org/abs/1302.2263

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