Zobrazeno 1 - 10
of 245
pro vyhledávání: '"Johnny K. O. Sin"'
Autor:
Linhua Huang, Yong Liu, Xin Peng, Takashi Tsuji, Yuichi Onozawa, Naoto Fujishima, Johnny K. O. Sin
Publikováno v:
IEEE Transactions on Electron Devices. 70:675-682
Publikováno v:
IEEE Electron Device Letters. 44:108-111
Autor:
Linhua Huang, Yong Liu, Xin Peng, Yuichi Onozawa, Takashi Tsuji, Naoto Fujishima, Johnny K. O. Sin
Publikováno v:
IEEE Transactions on Electron Devices. 69:690-695
Autor:
Guangfu Lv, Yixiao Ding, Xiangming Fang, Lisong Li, Feiming Bai, Johnny K. O. Sin, Rongxiang Wu
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 12:704-706
A High-Efficiency Double-Side Silicon- Embedded Inductor for Integrated DC–DC Converter Applications
Autor:
Yixiao Ding, Johnny K. O. Sin, Rongxiang Wu, Guangfu Lv, Xiangming Fang, Niteng Liao, Feiming Bai
Publikováno v:
IEEE Transactions on Electron Devices. 68:4801-4804
In this brief, a novel double-side silicon-embedded coreless inductor is proposed and demonstrated for integrated dc–dc converter applications. The inductor has double-side thick windings embedded into the silicon substrate and connected in paralle
Autor:
Yuichi Onozawa, Naoto Fujishima, Yong Liu, Chao Xiao, Linhua Huang, Johnny K. O. Sin, Xin Peng, Takashi Tsuji, Yixiao Ding
Publikováno v:
IEEE Transactions on Electron Devices. 68:2133-2137
We fabricated Al2O3/LaAlO3/SiO2 (ALS) gate stacks on 4H-SiC, with LaAlO3 (LAO) film being annealed in O2 atmosphere. The ALS gate stack annealed at 700 °C exhibits a much higher breakdown effective electric field ( ${E}_{\text {eff}}$ ), which is ap
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 951-957 (2021)
A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation. Results show that it has the same breakdown voltage as the SiC high-k (HK)
Publikováno v:
IEEE Transactions on Electron Devices. 67:2482-2488
In this article, a trench-field-plate (TFP) high-voltage power MOSFET is proposed. Instead of using a conventional n− drift region, the TFP power MOSFET features benzocyclobutene dielectric in the sidewall of deep trenches in the drift region and a
Publikováno v:
IEEE Electron Device Letters. 41:268-271
In this letter, a fan-out-package-embedded power inductor technology is proposed. The inductor is embedded in a silicon-based fan-out package and surrounds the packaged die in which a voltage converter IC can be put. To demonstrate the integrated pow
Publikováno v:
IEEE Electron Device Letters. 41:95-98
In this letter, a suspended thick-winding inductor is demonstrated for integrated voltage regulator applications. A suspended thick-winding inductor with an area of 2.9 mm2 and an inductance of 25 nH is designed and fabricated. The inductor has a win