Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Johnathan McKenna"'
Autor:
D. S. Green, Brook Hosse, Jeffrey B. Shealy, Jeffrey D. Brown, Johnathan McKenna, Martin Young, Shawn R. Gibb, M. J. Poulton, Kevin Gratzer, Sangmin Lee, Yinbao Yang, Ramakrishna Vetury, Thomas Mercier
Publikováno v:
ECS Meeting Abstracts. :1545-1545
AlGaN/GaN High Electron Mobility Transistors (HEMTs) are receiving considerable attention as a technology that is well suited for high power, high efficiency, radio frequency(RF) and microwave applications. The demonstration of attractive performance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::640df69f59ce96d7154df3c4b8569967
https://doi.org/10.1149/ma2006-02/32/1545
https://doi.org/10.1149/ma2006-02/32/1545
