Zobrazeno 1 - 10
of 335
pro vyhledávání: '"John Zavada"'
Autor:
John Zavada
Publikováno v:
ECS Transactions. 89:17-26
This paper focuses on the magnetic properties of wide bandgap III-N semiconductors doped with rare earth elements. Such materials form a novel class of dilute magnetic semiconductors that have an important potential impact on future information proce
Publikováno v:
MRS Advances. 2:135-140
We report the temperature dependence of Er optical centers in GaN epilayers prepared by metal-organic chemical vapor deposition under the resonant excitation (4I15/2 →4I9/2) excitation using a Ti:Sapphire laser (λexc = 809 nm). High resolution inf
Autor:
V. X. Ho, Y. Wang, Jingyu Lin, John Zavada, T. M. Al Tahtamouni, Nguyen Q. Vinh, Hongxing Jiang
Publikováno v:
Laser Congress 2018 (ASSL).
We report the realization of room-temperature, stimulated-emission in Er-doped-GaN multiple-quantum-wells at the 1.5-μm. Structures were grown by MOCVD and lasing was confirmed by threshold-behaviors of emission-intensity as functions of pump-fluenc
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99e9df2b56bc376b101606a75e850e34
https://hdl.handle.net/10576/12151
https://hdl.handle.net/10576/12151
Autor:
John Zavada, Mikhail G. Brik, M. Stachowicz, Chong-Geng Ma, Adrian Kozanecki, Jingyu Lin, Hongxing Jiang
Publikováno v:
Optical Materials. 37:165-174
Much effort has been put to achieve optoelectronic devices based on Er doped GaN, operating on the intra-4f-shell transitions of erbium. The key issue for good understanding of energy transfer mechanisms to Er and its luminescence properties is the p
Autor:
Jérôme Tignon, Hanond Nong, Nathan Jukam, Feihu Wang, Alexei N. Baranov, Manijeh Razeghi, Raffaele Colombelli, John Zavada, Juliette Mangeney, Sergej Markmann, S. Moumdji, Edmund H. Linfield, Dimitris Pavlidis, Valentino Pistore, Maria I. Amanti, Sukhdeep Dhillon, Tobias Fobbe, Lianhe Li, Carlo Sirtori, Sarah Houver, Giles Davies
Publikováno v:
Terahertz Emitters, Receivers, and Applications VIII.
As applications such as heterodyne spectroscopy require only single mode operation, the selection, suppression and tuning of individual lasing modes in THz QCLs has received considerable attention over the last decade. By periodically patterning the
Autor:
Christopher A. Curwen, John L. Reno, Tatsuo Itoh, John Zavada, Daguan Chen, Luyao Xu, Alexei N. Baranov, Benjamin S. Williams, Manijeh Razeghi, Dimitris Pavlidis
Publikováno v:
Terahertz Emitters, Receivers, and Applications VIII.
Publikováno v:
Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, PS).
We report excitation mechanisms, quantum efficiency as well as the thermal quenching of photoluminescence processes in rare earth ions (Er and Nd) in GaN grown by metal organic chemical vapor deposition.
Publikováno v:
Optical Materials. 36:1730-1733
We report on studies to probe the local lattice disorder in InGaN:Er epilayers using the 1.54 μm emission of Er3+ ions. The InGaN layers were doped during MOCVD growth with Er to a concentration of about 2.3%. Site selective optical spectroscopy and
Publikováno v:
Scientific Reports
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::80370d63a6a5c61d2fc90730814d78ea
http://arxiv.org/abs/1611.08620
http://arxiv.org/abs/1611.08620