Zobrazeno 1 - 10
of 468
pro vyhledávání: '"John Whiteman"'
Autor:
Le Heron, Richard B.
Publikováno v:
Annals of the Association of American Geographers, 1987 Dec 01. 77(4), 661-663.
Externí odkaz:
https://www.jstor.org/stable/2563932
Autor:
Jones, Donald W.
Publikováno v:
Annals of the Association of American Geographers, 1988 Jun 01. 78(2), 362-364.
Externí odkaz:
https://www.jstor.org/stable/2563814
Autor:
Leigh, Roger
Publikováno v:
Geography, 1987 Jan 01. 72(1), 82-83.
Externí odkaz:
https://www.jstor.org/stable/40571229
Autor:
Heim, Carol E.
Publikováno v:
Journal of Economic Literature, 1987 Dec 01. 25(4), 1906-1907.
Externí odkaz:
https://www.jstor.org/stable/2726485
Autor:
Vining,, Daniel
Publikováno v:
Economic Geography, 1987 Oct 01. 63(4), 358-358.
Externí odkaz:
https://www.jstor.org/stable/143700
Autor:
Whiteman, John
Publikováno v:
Domus (0012-5377); mag89, Issue 705, p45-47, 3p, 3 Color Photographs
Autor:
Liyang Zhang, Wei-Sin Tan, Simon Westwater, Antoine Pujol, Andrea Pinos, Samir Mezouari, Kevin Stribley, John Whiteman, John Shannon, Keith Strickland
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 6, Pp 457-462 (2015)
The commercial adoption of GaN-on-Si light emitting diode (LED) chip technology is lagging behind incumbent sapphire substrates due to significantly longer growth time and poorer crystalline quality. To address these challenges, we report on the grow
Externí odkaz:
https://doaj.org/article/70ccc3934eb44b469edaec3b9bd2da55
Autor:
Radana Dvorak, John Whiteman
Publikováno v:
2021 ASEE Virtual Annual Conference Content Access Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c18497dc4b7b460ebfd75180a0b0bb79
https://doi.org/10.18260/1-2--36554
https://doi.org/10.18260/1-2--36554
Autor:
Keith Strickland, John Shannon, Kevin Stribley, Samir Mezouari, John Whiteman, Wei Sin Tan, Andrea Pinos, Antoine Pujol, Liyang Zhang, Simon Westwater
Publikováno v:
physica status solidi c. 13:266-269
The manufacturability of blue LED structures grown on 6-inch Si (111) substrates is reported. The totally epi-structure thickness is only 3.75 μm, which allows faster epitaxy process throughput and lower manufacturing costs. Well controlled strain e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65e19263d00113b87aaae5e1b308051d
https://doi.org/10.1002/pssc.201510168
https://doi.org/10.1002/pssc.201510168
Autor:
Anna Ruefer, Grant Colip, Victoria Hojnacki, Kristen St. John, Greg Gosselin, Loren Richardson, John Whiteman
Publikováno v:
Geological Society of America Abstracts with Programs.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0ec5a059ee4cd28d8697abeca692750
https://doi.org/10.1130/abs/2018se-312879
https://doi.org/10.1130/abs/2018se-312879