Zobrazeno 1 - 8
of 8
pro vyhledávání: '"John Wellington John"'
Autor:
Prabal Dweep Khanikar, Sheetal Dewan, John Wellington John, Atul Shukla, Pritam Das, Sajal Dhara, Supravat Karak, Shih‐Chun Lo, Ebinazar B. Namdas, Samaresh Das
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)
Abstract Photodetectors that can achieve high‐speed photoresponse and high responsivity with broadband detection are essential for bio‐health monitoring, imaging, chemical sensing, and many other applications. Herein a high‐performance inorgani
Externí odkaz:
https://doaj.org/article/576964199e5449238d85a6a0672777e2
Autor:
John Wellington John, Veerendra Dhyani, Alka Jakhar, Harmanpreet Kaur Sandhu, Sheetal Dewan, Samit K. Ray, Samaresh Das
Publikováno v:
IEEE Electron Device Letters. 43:1495-1498
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18fb03edcf1d921d9285be0d4d62fc9f
https://doi.org/10.1109/led.2022.3193724
https://doi.org/10.1109/led.2022.3193724
Autor:
Harmanpreet Kaur, Sandhu, John Wellington, John, Alka, Jakhar, Abhishek, Sharma, Alok, Jain, Samaresh, Das
Publikováno v:
Nanotechnology. 33(30)
Integration of nanolayered metal chalcogenides with wide-bandgap semiconductors forming pn heterojunction leads to the way of high-performance photodetection. This work demonstrates the fabrication of a few nanometer thick Molybdenum diselenide (MoSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ea4d2d5c665287924c3a372a6ffcd823
https://pubmed.ncbi.nlm.nih.gov/35439737
https://pubmed.ncbi.nlm.nih.gov/35439737
Autor:
Samaresh Das, Justin D. Holmes, John Wellington John, Amit K. Das, Samit K. Ray, Subhajit Biswas, Yordan M. Georgiev, Veerendra Dhyani, Anushka S. Gangnaik
Publikováno v:
ACS Applied Electronic Materials 2(2020)7, 1934-1942
Here, we report the observation of negative photoconductance (NPC) effect in highly arsenic-doped germanium nanowires (Ge NWs) for the infrared light. NPC was studied by light-assisted Kelvin probe force microscopy, which shows the depletion of carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31d43921873c0b1dea9959887f31585c
https://hdl.handle.net/10468/10476
https://hdl.handle.net/10468/10476
Autor:
John Wellington, John, Veerendra, Dhyani, Sarmistha, Maity, Subhrajit, Mukherjee, Samit K, Ray, Vikram, Kumar, Samaresh, Das
Publikováno v:
Nanotechnology. 31(45)
Transition metal dichalcogenides (TMDs) and their heterojunctions are drawing immense research interest for various applications including infrared detection. They are being studied with different semiconductor materials to explore their heterojuncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7cbc8d94acea5a3f4e78d1f437987988
https://pubmed.ncbi.nlm.nih.gov/32442984
https://pubmed.ncbi.nlm.nih.gov/32442984
Autor:
Harmanpreet Kaur Sandhu, John Wellington John, Alka Jakhar, Abhishek Sharma, Alok Jain, Samaresh Das
Publikováno v:
Advanced Materials Interfaces. 9:2102200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a69492a425002af934c6fe681a9e06
https://doi.org/10.1002/admi.202102200
https://doi.org/10.1002/admi.202102200
Autor:
Veerendra Dhyani, Arijit Sarkar, John Wellington John, Samit K. Ray, Samaresh Das, Alka Jakhar, Sudarshan Singh
Publikováno v:
Nanotechnology. 32:315205
A CMOS-compatible infrared (IR; 1200–1700 nm) detector based on Ge quantum dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) platform with a superior detectivity at room temperature is presented. The spectral resp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d74313c3ade6acd5a8ba0b2ea1a6fb2
https://doi.org/10.1088/1361-6528/abf6f0
https://doi.org/10.1088/1361-6528/abf6f0
Autor:
Samaresh Das, Vikram Kumar, John Wellington John, Samit K. Ray, Sarmistha Maity, Veerendra Dhyani, Subhrajit Mukherjee
Publikováno v:
Nanotechnology. 31:455208
Transition metal dichalcogenides (TMDs) and their heterojunctions are drawing immense research interest for various applications including infrared detection. They are being studied with different semiconductor materials to explore their heterojuncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b1c8602d353ce82510ce2de3118ce2a
https://doi.org/10.1088/1361-6528/ab95b9
https://doi.org/10.1088/1361-6528/ab95b9