Výsledky vyhledávání - "John Wellington John"

Akademický článek

High‐Performance Air‐Stable 2D‐WSe2/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection

Autor: Prabal Dweep Khanikar, Sheetal Dewan, John Wellington John, Atul Shukla, Pritam Das, Sajal Dhara, Supravat Karak, Shih‐Chun Lo, Ebinazar B. Namdas, Samaresh Das

Publikováno v: Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)

Abstract Photodetectors that can achieve high‐speed photoresponse and high responsivity with broadband detection are essential for bio‐health monitoring, imaging, chemical sensing, and many other applications. Herein a high‐performance inorgani

Externí odkaz: https://doaj.org/article/576964199e5449238d85a6a0672777e2

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Black-Arsenic/Germanium-on-Insulator Heterostructure Field Effect Transistor for Ultrafast Polarization Sensitive Short-Wave Infrared Photodetection

Autor: John Wellington John, Veerendra Dhyani, Alka Jakhar, Harmanpreet Kaur Sandhu, Sheetal Dewan, Samit K. Ray, Samaresh Das

Publikováno v: IEEE Electron Device Letters. 43:1495-1498

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::18fb03edcf1d921d9285be0d4d62fc9f
https://doi.org/10.1109/led.2022.3193724

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Self-powered, low-noise and high-speed nanolayered MoSe

Autor: Harmanpreet Kaur, Sandhu, John Wellington, John, Alka, Jakhar, Abhishek, Sharma, Alok, Jain, Samaresh, Das

Publikováno v: Nanotechnology. 33(30)

Integration of nanolayered metal chalcogenides with wide-bandgap semiconductors forming pn heterojunction leads to the way of high-performance photodetection. This work demonstrates the fabrication of a few nanometer thick Molybdenum diselenide (MoSe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::ea4d2d5c665287924c3a372a6ffcd823
https://pubmed.ncbi.nlm.nih.gov/35439737

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Ultra-high negative infrared photoconductance in highly As-doped germanium nanowires induced by hot electron trapping

Autor: Samaresh Das, Justin D. Holmes, John Wellington John, Amit K. Das, Samit K. Ray, Subhajit Biswas, Yordan M. Georgiev, Veerendra Dhyani, Anushka S. Gangnaik

Publikováno v: ACS Applied Electronic Materials 2(2020)7, 1934-1942

Here, we report the observation of negative photoconductance (NPC) effect in highly arsenic-doped germanium nanowires (Ge NWs) for the infrared light. NPC was studied by light-assisted Kelvin probe force microscopy, which shows the depletion of carri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31d43921873c0b1dea9959887f31585c
https://hdl.handle.net/10468/10476

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Broadband infrared photodetector based on nanostructured MoSe

Autor: John Wellington, John, Veerendra, Dhyani, Sarmistha, Maity, Subhrajit, Mukherjee, Samit K, Ray, Vikram, Kumar, Samaresh, Das

Publikováno v: Nanotechnology. 31(45)

Transition metal dichalcogenides (TMDs) and their heterojunctions are drawing immense research interest for various applications including infrared detection. They are being studied with different semiconductor materials to explore their heterojuncti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::7cbc8d94acea5a3f4e78d1f437987988
https://pubmed.ncbi.nlm.nih.gov/32442984

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MoSe 2 /n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths

Autor: Harmanpreet Kaur Sandhu, John Wellington John, Alka Jakhar, Abhishek Sharma, Alok Jain, Samaresh Das

Publikováno v: Advanced Materials Interfaces. 9:2102200

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::40a69492a425002af934c6fe681a9e06
https://doi.org/10.1002/admi.202102200

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Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

Autor: Veerendra Dhyani, Arijit Sarkar, John Wellington John, Samit K. Ray, Samaresh Das, Alka Jakhar, Sudarshan Singh

Publikováno v: Nanotechnology. 32:315205

A CMOS-compatible infrared (IR; 1200–1700 nm) detector based on Ge quantum dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) platform with a superior detectivity at room temperature is presented. The spectral resp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d74313c3ade6acd5a8ba0b2ea1a6fb2
https://doi.org/10.1088/1361-6528/abf6f0

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