Zobrazeno 1 - 10
of 22
pro vyhledávání: '"John W. Hartzell"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:1161-1165
Thin film transistors integrated on flexible substrates are becoming increasingly attractive for low cost displays, sensors, and rf communication applications. The successful development of the flexible devices will be dictated by the enhancement in
Autor:
John W. Hartzell, Abbas Hamshidi, Jeffery A. Spirko, Miltiadis K. Hatalis, Themis Afentakis, Ta-Ko Chuang, Po-Chin Kuo, Matias N. Troccoli, Apostolos T. Voutsas
Publikováno v:
ECS Transactions. 3:237-247
This paper presents a 230 dpi Active Matrix Polymer Light Emitting Diode (AMPLED) display on flexible stainless steel substrates fabricated with laser annealed poly-silicon TFT technology. The high resolution display is based on the standard 2 TFT pi
Autor:
Themis Afentakis, Po-Chin Kuo, John W. Hartzell, Kamil Klier, Apostolos T. Voutsas, Jeffery A. Spirko, Miltiadis K. Hatalis, Matias N. Troccoli, Abbas Jamshidi Roudbari, Ta-Ko Chuang, Ivan Biaggio
Publikováno v:
ECS Transactions. 3:349-359
The first successful integration of poly-Si thin-film- transistor (poly-Si TFT) backplane with polymer light-emitting diodes (PLEDs) onto a flexible stainless-steel foil is described, and a high-resolution (230 DPI) monochrome active- matrix polymer
Publikováno v:
IEEE Transactions on Electron Devices. 53:815-822
This paper discusses in detail the design and fabrication process for the realization of high-performance polycrystalline silicon thin-film transistors and digital CMOS circuitry on thin flexible stainless steel foils. A comprehensive approach to sub
Autor:
Mark A. Crowder, Changqing Zhan, John W. Hartzell, Akihide Shibata, Hiroshi Kotaki, Ryoichi Nakatani, Watanabe Keiji, Paul J. Schuele, Sato Takuya
Publikováno v:
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pa
Publikováno v:
SID Symposium Digest of Technical Papers. 31:278-281
Using a suitable dilution process at PECVD improves quality of gate nitride and a-Si:H channel at low temperature. By using suitable Ar dilution in gate nitride and H2 dilution in a-Si:H channel, the low temperature a-Si:H TFTs have not only similar
Autor:
Takeshi Shiomi, Changqing Zhan, Watanabe Keiji, Paul J. Schuele, John W. Hartzell, Akihide Shibata, Kenji Komiya, Sato Takuya, Hiroshi Kotaki, Mark A. Crowder
Publikováno v:
2013 IEEE International Meeting for Future of Electron Devices, Kansai.
This paper demonstrates electrophoresis of silicon micro-rods by applying asymmetric AC bias to two electrodes capped with a thin dielectric film. The silicon micro-rods migrate bi-directionally when asymmetric AC bias is applied to the electrodes. T
Autor:
Carmen E. Campbell, David R. Evans, Ibrahim Sezan, Vena N. Haynes, George B. Middleton, Holly M. Simon, Dean Messing, Maria W. Smith, Kevin R. Schwarzkopf, Changqing Zhan, Andrei L. Ghindilis, John W. Hartzell, Bruce D. Ulrich, Paul J. Schuele, Michael J. Frasier
Publikováno v:
Biosensorsbioelectronics. 35(1)
A real-time, label free assay was developed for microbial detection, utilizing double-stranded DNA targets and employing the next generation of an impedimetric sensor array platform designed by Sharp Laboratories of America (SLA). Real-time curves of
Autor:
K. Tomiyasu, Y. Fukushima, Kenshi Tada, John W. Hartzell, Yasuyuki Ogawa, Y. Takafuji, Steven R. Droes, E. Kobayashi, S. Matsumoto, Y. Watanabe, Michiko Takei, Apostolos T. Voutsas, H. Kobayashi
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
Submicron single crystal-Si TFTs and a test circuit are integrated on a 320 mm × 400 mm ( Gen 1 ) glass substrate for the first time, by transferring devices using hydrogen exfoliation and direct bonding without adhesive. Characteristics of the NMOS
Publikováno v:
MRS Proceedings. 862
In the present work, we report on the fabrication of high quality microcrystalline Si thin films by high-density PECVD technique. The typical deposition rate of the HD-PECVD μ-Si thin films was greater than 350 Å/min in the H2/SiH4 ratio range of 2