Zobrazeno 1 - 8
of 8
pro vyhledávání: '"John V. Jensen"'
Autor:
John V. Jensen
Publikováno v:
Jensen, J V 2017, ' I Danmarks Interesse... Minerydningen på den jyske vestkyst 1945 ', Denmark. Kongelige Bibliotek. Fund og Forskning, bind 56, s. 201-242 . https://doi.org/10.7146/fof.v56i0.118933
John V. Jensen: In Denmark’s Interest … Mine clearing on Jutland’s west coast 1945 The article is about mine clearing on Jutland’s west coast in 1945. The mine clearing started shortly after the German capitulation. It was unusual because Ger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51217b0e73eeca1c1fbff3f62dbc323d
https://pure.kb.dk/da/publications/4b55486f-3d8f-4ade-938f-a1318c753d0c
https://pure.kb.dk/da/publications/4b55486f-3d8f-4ade-938f-a1318c753d0c
Publikováno v:
SPIE Proceedings.
A methodology and a Monte Carlo simulation flow with integrated LSI Logic's OPC package, Molotof, was applied to the 65nm poly line sensitivity analysis. Strong phase shift mask (sPSM) manufacturing specifications were optimized to obtain image criti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6193a48cb16fa5eb19abd476de7dd94f
https://doi.org/10.1117/12.570283
https://doi.org/10.1117/12.570283
Publikováno v:
SPIE Proceedings.
A methodology has been developed to measure OPC model robustness as a function of systematic and statistical process variations. The analysis includes comparison of imaging solutions with several different OPC models generated for different writing t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac238fe30ba72eb9ce9f295cdc50a9d
https://doi.org/10.1117/12.569580
https://doi.org/10.1117/12.569580
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
A more precise and accurate method of quantifying line end effects on binary photomasks becomes necessary as reticle features continue to decrease in size. A new methodology for measuring and evaluating line ends was developed. By performing multiple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b11056a1a8a22311337f5070bc8e0b2e
https://doi.org/10.1117/12.533194
https://doi.org/10.1117/12.533194
Publikováno v:
SPIE Proceedings.
LSI Logic's OPC package, Molotof, integrated into several RET flows has been successfully applied for strong phase shift mask simulation and optimization. Molotof simulator was used to predict sPSM imaging performance in response to statistical error
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f46dba3d3637327759e508b77ce1b94
https://doi.org/10.1117/12.556623
https://doi.org/10.1117/12.556623
Autor:
Rick S. Farnbach, Darren Taylor, Patrick M. Martin, John V. Jensen, Henry Kamberian, Benjamin George Eynon, George E. Bailey, Kunal N. Taravade, Neal P. Callan
Publikováno v:
SPIE Proceedings.
Dark field (i.e. hole and trench layer) lithographic capability is lagging that of bright field. The most common dark field solution utilizes a biased-up, standard 6% attenuated phase shift mask (PSM) with an under-exposure technique to eliminate sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::564a4720f60d01175f3c595759871832
https://doi.org/10.1117/12.485518
https://doi.org/10.1117/12.485518
Autor:
Il-Ho Lee, Rieko Arakawa, Hyun-Suk Bang, Keun-Won Park, Makoto Kozuma, Seiji Kubo, John V. Jensen, Tatsuya Takahashi, Masaya Komatsu, Hong-Seok Kim, Cheol Shin
Publikováno v:
SPIE Proceedings.
In low k1 lithography, reticle quality decides the process capability. Therefore, we must minimize CD errors on the reticle plate. Double Step process (DS process) is a unique method to improve CD uniformity of line patterns on the active region of p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46f3a7cf51d07633b1c895653bf9e672
https://doi.org/10.1117/12.410759
https://doi.org/10.1117/12.410759
Autor:
Keith K. Chao, John V. Jensen, Mario Garza, Eytan Barouch, Saeed Sabouri, Steven A. Orszag, Uwe Hollerbach, Nicholas K. Eib, Wayne P. Shen, K. C. Wang, Vijaya N.V. Raghavan, Theron L. Felmlee, Eric Jackson
Publikováno v:
SPIE Proceedings.
We present results of a verification study of totally automated optical proximity correction (OPC) for mask redesign to enhance process capability. OPC was performed on an aggressive 0.35 micrometer i-line LSI logic SRAM design using the automated OP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee5855e0a92eddc9ad35e1ebad153efa
https://doi.org/10.1117/12.275804
https://doi.org/10.1117/12.275804