Zobrazeno 1 - 7
of 7
pro vyhledávání: '"John Twynam"'
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
The influence of eutectic die attach on RF-substrate losses of AlGaN/GaN HEMTs grown on high-resistivity silicon substrates has been studied. A severe degradation in load pull efficiency is observed after die attach. Analyzing this degradation for di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b6a85e9c8f1fde7d12b13dd574bde6
https://doi.org/10.23919/eumic.2019.8909678
https://doi.org/10.23919/eumic.2019.8909678
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The influence of an accurate electron velocity-field relationship modelling on pulsed IV and small-signal RF characteristics in GaN-on-Si HEMTs is discussed and compared to measurements. We show by technology computer-aided design (TCAD) simulation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97f8f4a090935b2e4e13a7ba0069d72
https://doi.org/10.1109/sispad.2019.8870417
https://doi.org/10.1109/sispad.2019.8870417
Publikováno v:
Semiconductor Science and Technology. 35:055014
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4716f94820ad2aa003d3c29cb76a8d0
https://doi.org/10.1088/1361-6641/ab78f5
https://doi.org/10.1088/1361-6641/ab78f5
Autor:
John Twynam, Hong Goo Choi, Sung-Dal Jung, Sungwon D. Roh, Jong Sub Lee, Jeong Soon Yim, Deok-Won Seo, Heejae Shim, Sung-Woon Moon
Publikováno v:
Solid-State Electronics. 96:19-21
We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2e5dbc098c25e613ea0559b692e7fd5
https://doi.org/10.1016/j.sse.2014.03.011
https://doi.org/10.1016/j.sse.2014.03.011
Autor:
Hong Goo Choi, Sungwon D. Roh, Ki Min Kim, Jeong Soon Yim, Jong-Sub Lee, John Twynam, Sung-Dal Jung, Deok-Won Seo, Sung-Woon Moon
Publikováno v:
IEEE Electron Device Letters. 35:446-448
We present the development of an Au-free ohmic contact metallization for high voltage GaN-based high electron mobility transistors (HEMTs). In this letter, low contact resistance (0.81 Ω·mm) is obtained for Au-free electrodes on AlGaN/GaN HEMT stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9259065e22ab1c37b1a6ab3e1aa236ba
https://doi.org/10.1109/led.2014.2304587
https://doi.org/10.1109/led.2014.2304587
Autor:
Sungwon D. Roh, Sung-Dal Jung, Sung-Woon Moon, Jong Sub Lee, Jeong Soon Yim, John Twynam, Heejae Shim, Hong Goo Choi, Deok-Won Seo
Publikováno v:
Japanese Journal of Applied Physics. 53:08NH02
We have investigated the effects of surface passivation on off-state leakage current and current collapse effects of high-voltage GaN-on-Si hetero-junction field effect transistors (HFETs) by using low pressure chemical vapor deposition (LPCVD) of si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::156eef723cde62169deae3fe2fd96a53
https://doi.org/10.7567/jjap.53.08nh02
https://doi.org/10.7567/jjap.53.08nh02
Autor:
Sung-Woon Moon, Jongsub Lee, Deokwon Seo, Sungdal Jung, Hong Goo Choi, Heejae Shim, Jeong Soon Yim, John Twynam, Sungwon D. Roh
Publikováno v:
Japanese Journal of Applied Physics; Aug2014, Vol. 53 Issue 8S3, p1-1, 1p