Zobrazeno 1 - 10
of 33
pro vyhledávání: '"John T. Leonard"'
Autor:
Tal Margalith, Daniel Cohen, Benjamin P. Yonkee, John T. Leonard, James S. Speck, Robert M. Farrell, S. P. DenBaars, Tom Mates, Charles A. Forman, Shuji Nakamura, Christopher D. Pynn
Publikováno v:
Journal of Crystal Growth. 464:197-200
P-down LEDs (PDLEDs) have the potential to open up new design schemes for III-nitride LEDs compared to conventional n-down LEDs (NDLEDs). For light emitters operating above 480 nm, the PDLED design enables the epitaxial advantages of semipolar (2021)
Autor:
Mohd Sharizal Alias, Shuji Nakamura, Boon S. Ooi, Tien Khee Ng, John T. Leonard, A. Pourhashemi, Chao Shen, Munir M. El-Desouki, Steven P. DenBaars, James S. Speck, Ahmed Y. Alyamani, Hassan M. Oubei
Publikováno v:
ACS Photonics. 3:262-268
To date, solid-state lighting (SSL), visible light communication (VLC), and optical clock generation functionalities in the blue-green color regime have been demonstrated based on discrete devices, including light-emitting diodes, laser diodes, and t
Autor:
Daniel A. Cohen, SeungGeun Lee, Shuji Nakamura, Tal Margalith, John T. Leonard, Erin C. Young, Jared Kearns, Charles A. Forman, Steven P. DenBaars
Publikováno v:
Gallium Nitride Materials and Devices XIII.
This is the first demonstration of continuous-wave (CW) operation of nonpolar GaN-based VCSELs. These devices had a dual-dielectric distributed Bragg reflector (DBR) design with ion implanted apertures and III-nitride tunnel junction (TJ) intracavity
Autor:
James S. Speck, Charles A. Forman, John T. Leonard, Daniel A. Cohen, Jared Kearns, SeungGeun Lee, Changmin Lee, Shuji Nakamura, Steven P. DenBaars
Publikováno v:
Conference on Lasers and Electro-Optics.
We demonstrated a violet III-nitride vertical-cavity surface-emitting laser (VCSEL) with a GaN tunnel junction (TJ) contact grown by a metalorganic chemical vapor deposition (MOCVD) technique. A peak output power of 319 uW was achieved.
Autor:
Tal Margalith, John T. Leonard, Shuji Nakamura, Daniel A. Cohen, James S. Speck, Erin C. Young, SeungGeun Lee, Steven P. DenBaars, Charles A. Forman, Robert M. Farrell, Benjamin P. Yonkee
Publikováno v:
2017 IEEE Photonics Conference (IPC).
We demonstrate electrically injected III-nitride VCSELs with ion implanted apertures, tunnel junction intracavity contacts, and a dual dielectric DBR flip-chip design. Precise cavity length control has been achieved using photoelectrochemical band ga
Autor:
Boon S. Ooi, James S. Speck, Chao Shen, Shuji Nakamura, Tien Khee Ng, Ahmed Y. Alyamani, Changmin Lee, John T. Leonard, Munir M. El-Desouki, Steven P. DenBaars
Publikováno v:
SPIE Proceedings.
III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC s
Autor:
SeungGeun Lee, Charles A. Forman, Daniel A. Cohen, John T. Leonard, Jared Kearns, Shuji Nakamura, Steven P. DenBaars
Publikováno v:
Optics Express. 27:31621
We report III-nitride vertical-cavity surface-emitting lasers (VCSELs) with buried tunnel junction (BTJ) contacts. To form the BTJs, GaN TJ contacts were etched away outside the aperture followed by n-GaN regrowth for current spreading. Under pulsed
Autor:
Shuji Nakamura, John T. Leonard, James S. Speck, Erin C. Young, Sang Ho Oh, Steven P. DenBaars, Changmin Lee, Benjamin P. Yonkee
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
Tunnel junctions in the III-Nitride system have the potential to revolutionize GaN device design and capabilities. However, the high doping densities required and difficulty in activating buried p-GaN prevent widespread use. We combine MOCVD and MBE
Autor:
Erin C. Young, Shuji Nakamura, Benjamin P. Yonkee, James S. Speck, Changmin Lee, Steven P. DenBaars, John T. Leonard
Publikováno v:
Optics express. 24(7)
We demonstrate a III-nitride edge emitting laser diode (EELD) grown on a (2021) bulk GaN substrate with a GaN tunnel junction contact for hole injection. The tunnel junction was grown using a combination of metal-organic chemical-vapor deposition (MO
Autor:
Tien Khee Ng, Erin C. Young, Tal Margalith, Steven P. DenBaars, Daniel A. Cohen, Chao Shen, Benjamin P. Yonkee, James S. Speck, Shuji Nakamura, Boon S. Ooi, John T. Leonard
Publikováno v:
SPIE Proceedings.
We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with