Zobrazeno 1 - 6
of 6
pro vyhledávání: '"John Stoemenos"'
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 1878 (2021)
Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) were grown at 413 °C, intentionally below the threshold for Solid State Crystallization, which is 420 °C. These whiskers have significant common characteristics with whiskers g
Externí odkaz:
https://doaj.org/article/87e071c5c2d34b9c9b791efce7f4689e
Autor:
Dimitrios Skarlatos, Vassilios Ioannou-Sougleridis, Mario Barozzi, Giancarlo Pepponi, Nikolaos Zisis Vouroutzis, Dimitrios Velessiotis, John Stoemenos, Nikolas Zographos, Benjamin P Colombeau
Publikováno v:
ECS Meeting Abstracts. :1179-1179
The last decade has seen considerable interest in the use of germanium for high-speed low-power electronics. Despite the demonstration of high performance p-channel Ge transistors in planar and non-planar device technology, fabrication of n-channel G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6953ca1a9260ac20ea47e86040572fe7
https://doi.org/10.1149/ma2018-02/35/1179
https://doi.org/10.1149/ma2018-02/35/1179
Autor:
Vladimir Petukhov, Ioannis Tsiaoussis, Johan Rothman, Andrey Bakin, John Stoemenos, Stefan Ivanov, Andreas Waag
Publikováno v:
Journal of Crystal Growth. 323:111-113
The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17c56538f25feda32bc622ee9476aaad
https://doi.org/10.1016/j.jcrysgro.2010.12.015
https://doi.org/10.1016/j.jcrysgro.2010.12.015
Publikováno v:
Applied Physics A. 102:251-251
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afe456e752d0e97773c5aa8bf4456e75
https://doi.org/10.1007/s00339-010-6124-z
https://doi.org/10.1007/s00339-010-6124-z
Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer
Publikováno v:
Journal of Applied Physics. 100:103506
The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3879f70af724e445e05313c75df8fc21
https://doi.org/10.1063/1.2382669
https://doi.org/10.1063/1.2382669
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