Zobrazeno 1 - 10
of 187
pro vyhledávání: '"John S. Suehle"'
Publikováno v:
The Journal of Physical Chemistry C. 124:8806-8812
Understanding the electronic structure of organic/molecular semiconductors and the energetics at their interfaces with metals is critical for organic-based electronics applications. Here we demonst...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262cab4da86790ed16509ddfeba5f08e
https://doi.org/10.1021/acs.jpcc.0c00865
https://doi.org/10.1021/acs.jpcc.0c00865
Autor:
Kin P. Cheung, Richard G. Southwick, John S. Suehle, Jason T. Ryan, A. S. Oates, Jason P. Campbell
Publikováno v:
IEEE Electron Device Letters. :1-1
Charge pumping is one of the most relied techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents, which render the technique unsuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b0574d3faf9e88329037bbc0ab1e7af
https://doi.org/10.1109/led.2013.2251315
https://doi.org/10.1109/led.2013.2251315
Autor:
Hao, Zhu, Haitao, Li, Joseph W F, Robertson, Arvind, Balijepalli, Sergiy, Krylyuk, Albert V, Davydov, John J, Kasianowicz, John S, Suehle, Qiliang, Li
Publikováno v:
Nanotechnology. 28(43)
Novel nanofluidic chemical cells based on self-assembled solid-state SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f3dc57b7ced02a9ff28adcc6b129b07f
https://pubmed.ncbi.nlm.nih.gov/28854152
https://pubmed.ncbi.nlm.nih.gov/28854152
Autor:
Pragya R. Shreshta, John S. Suehle, Kin P. Cheung, Dimitris E. Ioannou, Jason P. Campbell, Z. Chbili
Publikováno v:
Materials Science Forum. :529-532
In this paper we report an unexpected improvement in the SiC DMOSFET transistor characteristics after a long temperature treatment at 150 C. The evolution of the device characteristics during a TDDB stress is compared to that after an elevated temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f97289700e200c19649a57166bbd718
https://doi.org/10.4028/www.scientific.net/msf.778-780.529
https://doi.org/10.4028/www.scientific.net/msf.778-780.529
Autor:
Kin P. Cheung, Susanne Stemmer, John S. Suehle, Bijesh Rajamohanan, Varistha Chobpattana, Canute Vaz, Suman Datta, David J. Gundlach, Rahul Pandey
Publikováno v:
IEEE Electron Device Letters. 36:20-22
In this letter, we demonstrate using fast current-voltage measurements, low switching slope of 64 mV/decade over a drain current range between $10^{\mathrm {\mathbf {-3}}}$ and $2 \times 10^{\mathrm {\mathbf {-2}}} \mu $ A/ $\mu $ m in staggered-gap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9145831728039e02b2ae4006d6c3f824
https://doi.org/10.1109/led.2014.2368147
https://doi.org/10.1109/led.2014.2368147
Autor:
Hao Zhu, Hui Yuan, Curt A. Richter, Oleg A. Kirillov, Qiliang Li, John S. Suehle, Dimitris E. Ioannou
Publikováno v:
ECS Transactions. 50:267-271
In this work, we present an experimental study on the effect of metal gates / high-k dielectrics stacks on threshold voltage and carrier mobility in nanowire field effect transistors. The difference between effective mobility and field effect mobilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b411e8879300a3f90de6cc977f64587a
https://doi.org/10.1149/05004.0267ecst
https://doi.org/10.1149/05004.0267ecst
Publikováno v:
IEEE Transactions on Electron Devices. 59:2943-2949
Frequency-dependent charge pumping (CP) (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high-k gate stacks. However, conflicting interpretations of the CP frequency-defect d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da28fc91ac2bbe5ebab6b5e18f8bc70
https://doi.org/10.1109/ted.2012.2211880
https://doi.org/10.1109/ted.2012.2211880
Autor:
John S. Suehle, Tong Ren, John E. Bonevich, Sujitra J. Pookpanratana, Christina A. Hacker, Sean N. Natoli, Curt A. Richter, Hao Zhu, Qiliang Li
Publikováno v:
ACS applied materialsinterfaces. 8(30)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::076b9ddb31c710d4e383cff3eb031e54
https://pubmed.ncbi.nlm.nih.gov/26600234
https://pubmed.ncbi.nlm.nih.gov/26600234
Autor:
Qiliang Li, John E. Bonevich, Curt A. Richter, Christina A. Hacker, Hao Zhu, Sean N. Natoli, Sujitra J. Pookpanratana, John S. Suehle, Tong Ren
Publikováno v:
ACS applied materialsinterfaces. 7(49)
In this work, high-performance top-gated nanowire molecular flash memory has been fabricated with redox-active molecules. Different molecules with one and two redox centers have been tested. The flash memory has clean solid/molecule and dielectric in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15a55b07547d9f143a1b51f4a10b3d77
https://pubmed.ncbi.nlm.nih.gov/27447191
https://pubmed.ncbi.nlm.nih.gov/27447191
Publikováno v:
Thin Solid Films. 519:2811-2816
In this paper, we will provide an overview of the internal photoemission (IPE) and the significance of this technique when combined with spectroscopic ellipsometry (SE) to investigate the interfacial electronic properties of heterostructures. In part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebcb387afa40e854e35c71e94ac441c8
https://doi.org/10.1016/j.tsf.2010.11.080
https://doi.org/10.1016/j.tsf.2010.11.080