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pro vyhledávání: '"John S. Sandoval"'
Characterization of carrier generation and transport mechanisms in single-crystal and thin-film HgI2
Autor:
Christos Ferekides, John S. Sandoval, U. Khadilkar, Don L. Morel, Raymond P. DeVito, L. van den Berg, Robert Mamazza
Publikováno v:
Thin Solid Films. 427:381-385
High-electronic-quality thin films of mercuric iodide have been deposited on SnO2 and other transparent contacts. The crystallites exhibit some preference for c-axis orientation and have lengths comparable to the overall film thickness of 200–400
Autor:
Colleen S. Spiegel, John S. Sandoval, Paul H. Holloway, L. van den Berg, Mark Davidson, W. Brock Alexander, Narada Bradman
Publikováno v:
Hard X-Ray and Gamma-Ray Detector Physics VII.
The performance of semiconductor radiation detectors is a function of electronic properties which are in turn related to crystallographic quality. In this paper we used devices from and growth regions of several different HgI2 crystals grown by the P
Publikováno v:
Hard X-Ray and Gamma-Ray Detector Physics VII.
The transport properties of electrons and holes in mercuric iodide determine the performance of detectors. The relatively low levels of these properties limit the volume of detectors with high spectral resolution that can be fabricated and leads to l
Publikováno v:
SPIE Proceedings.
We investigated bulk-grown HgI 2 crystals to better understand the nature of crystallographic defects and strain/stress in different growth regions of the crystal and their affect on the performance of HgI 2 -based radiation detectors. Double-axis an
Autor:
Raymond P. DeVito, Lodewijk van den Berg, Fred P. Vaccaro, John D. Richards, R. D. Vigil, Martin Hykin, John S. Sandoval
Publikováno v:
SPIE Proceedings.
The recent technological developments and availability of mercuric iodide detectors have made their application for astronomy a realistic prospect. Mercuric iodide, because of its high resistivity and high density, can be used in a variety of astrono