Zobrazeno 1 - 5
of 5
pro vyhledávání: '"John Robert Ilzhoefer"'
Publikováno v:
International Symposium for Testing and Failure Analysis.
As semiconductor technology advances from one node to the next, fabrication also becomes increasingly challenging to ramp up production with the most desirable yield and reliable product in a timely manner. At an advanced technology node such as 65nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3abf32c817449729e5dafe03bcb2d864
https://doi.org/10.31399/asm.cp.istfa2006p0276
https://doi.org/10.31399/asm.cp.istfa2006p0276
Autor:
Colin L. Tan, Mark A. Boehm, John Robert Ilzhoefer, Chris Atkinson, Guohong Zhang, Donis G. Flagello, Stephen J. DeMoor, Bernd Geh, Chad Wickman, Changan Wang, Steve Hansen
Publikováno v:
SPIE Proceedings.
Gate CD control is crucial to transistor fabrication for advanced technology nodes at and beyond 65 nm. ACLV (across chip linewidth variation) has been identified as a major contributor to overall CD budget for low k1 lithography. In this paper, we p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::402f08753e3f73067f3a0df36ac83e3e
https://doi.org/10.1117/12.535829
https://doi.org/10.1117/12.535829
Autor:
John Robert Ilzhoefer, Stephen P. Renwick, Gary Zhang, Changan Wang, David Godfrey, Colin L. Tan, Steve D. Slonaker, Chris Atkinson, Catherine H. Fruga
Publikováno v:
SPIE Proceedings.
A detailed characterization of across chip line width variation (ACLV) has been carried out on the latest Nikon scanners with a combination of advanced metrology techniques in Texas Instruments, including scatterometer-based image field and CD finger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a44b78ff4c33cf09374e1027dfd003ca
https://doi.org/10.1117/12.485352
https://doi.org/10.1117/12.485352
Autor:
Wei W. Lee, Jeffrey R.D. DeBord, Melissa M. Hewson, John Robert Ilzhoefer, Vidyasagar Jayaraman
Publikováno v:
SPIE Proceedings.
As metal pitch requirements for 0.18 micrometer generation logic shrink to 0.50 micrometer pitch and below, the capability of 248 nm deep ultraviolet (DUV) lithography is challenged, especially for isolated narrow lines. Standard illumination methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af05a0024143895da359854b58cd7bdd
https://doi.org/10.1117/12.324041
https://doi.org/10.1117/12.324041
Publikováno v:
SPIE Proceedings.
The focus of this work is to provide a methodology to accurately disposition clear field contaminants at the reticle inspection station. A test mask was designed with programmed resist and chrome defects to simulate clear field contamination. Wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb001cb69ccfe8361fa2ceba6f532d42
https://doi.org/10.1117/12.301182
https://doi.org/10.1117/12.301182