Zobrazeno 1 - 9
of 9
pro vyhledávání: '"John Richard Hughes"'
Publikováno v:
IEEE Transactions on Medical Imaging. 17:1080-1083
The authors propose a method for producing a truly seamless tiled image sensor from four identical subarrays, such that the resulting tiled image sensor has no missing pixels. Four standard amorphous silicon photodiode-TFT (thin film transistor) arra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73637bd4dd3946fbfe4e789c62e81fbf
https://doi.org/10.1109/42.746724
https://doi.org/10.1109/42.746724
Publikováno v:
Philosophical Magazine B. 63:325-336
We present evidence that the majority of deep states located near to the gate-insulator interface in amorphous silicon (a-Si) thin-film transistors are part of a defect pool of silicon dangling-bond states, whose density and energy position within th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0481f66aa334f4a359d8fccbc9ddf2bd
https://doi.org/10.1080/01418639108224449
https://doi.org/10.1080/01418639108224449
Autor:
John Richard Hughes
Publikováno v:
International Journal of Health Care Quality Assurance. 10:153-155
Reviews the present contracting arrangements in general practice. Outlines recent Government White Papers, leading to a discussion of the future opportunities for general practice. Demonstrates the reality of primary‐care‐ led NHS with quality of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::facf76c57dec594fcc3d7a53649367d8
https://doi.org/10.1108/09526869710189324
https://doi.org/10.1108/09526869710189324
Publikováno v:
Applied Physics Letters. 57:1416-1418
Thin‐film transistors were thermally annealed while a bias voltage was applied to the gate electrode. The transfer characteristics were then measured, and the density of states distributions derived by field‐effect analysis. The results indicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::825c2d3780889dd1a614ab5af170f814
https://doi.org/10.1063/1.103452
https://doi.org/10.1063/1.103452
Autor:
M. J. Powell, Barry Forester Martin, J E Curran, Ian D. French, Carl Glasse, John Richard Hughes
Publikováno v:
MRS Proceedings. 507
We have developed a fully self-aligned amorphous silicon TFT technology, which is suitable for large area image sensors and active matrix displays. Self-alignment is achieved by defining the top nitride by back exposure and then forming source and dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::064bc02724592dd86f06d4e4ba272164
https://doi.org/10.1557/proc-507-91
https://doi.org/10.1557/proc-507-91
Autor:
Ian D. French, J E Curran, M. J. Powell, Anthony R. Franklin, John Richard Hughes, Carl Glasse
Publikováno v:
MRS Proceedings. 467
We have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c52c126e4a405cafe51086d0d2651530
https://doi.org/10.1557/proc-467-863
https://doi.org/10.1557/proc-467-863
Autor:
J E Curran, M. J. Powell, C. Glasse, John Richard Hughes, Neil C. Bird, Ian D. French, O S Davies
Publikováno v:
MRS Proceedings. 258
We have developed a technology for 2D matrix-addressed image sensors using amorphous silicon photodiodes and thin film transistors. We have built a small prototype, having 192×192 pixels with a 20μm pixel pitch, and assessed its performance. The ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce94c97aabe396f446d349b7c4ad8f0
https://doi.org/10.1557/proc-258-1127
https://doi.org/10.1557/proc-258-1127
Publikováno v:
Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials.
This paper investigates the variation of the integrated density of states with conduction activation energy in hydrogenated amorphous silicon thin film transistors. Results are given for two different gate insulator layers, PECVD silicon oxide and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e507f2cd7abd6121883738665167030
https://doi.org/10.7567/ssdm.1990.s-e-24
https://doi.org/10.7567/ssdm.1990.s-e-24
Publikováno v:
Journal of Non-Crystalline Solids. 114:642-644
We compare the characteristics of a-Si:H TFTs made using silicon nitride and silicon oxide gate insulators, and then determine the energy distribution of states in the amorphous silicon band -gap. We also subject the transistors to positive and negat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3ac2d40661bef16eb0161e0f9f03e63
https://doi.org/10.1016/0022-3093(89)90676-5
https://doi.org/10.1016/0022-3093(89)90676-5