Zobrazeno 1 - 10
of 12
pro vyhledávání: '"John R. A. Ayres"'
Autor:
A. Pecora, S.D. Brotherton, Luigi Mariucci, John R. A. Ayres, Guglielmo Fortunato, Antonio Valletta
Publikováno v:
Thin Solid Films. 427:117-122
Hot-carrier induced degradation is a main issue in the electrical stability of polysilicon TFTs and drain field relief architectures have been introduced, such as lightly doped drain (LDD) and gate overlapped LDD (GOLDD), to improve the stability. Bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5487679b03e7569665dd172e313db6f4
https://doi.org/10.1016/s0040-6090(02)01155-0
https://doi.org/10.1016/s0040-6090(02)01155-0
Autor:
Michael J. Trainor, Stanley D. Brotherton, John R. A. Ayres, C. Glaister, J. P. Gowers, David J. Mcculloch, Carole Anne Fisher, M.J. Edwards
Publikováno v:
Thin Solid Films. 337:188-195
The technology for the fabrication of poly-Si TFTs on glass substrates has now reached a level of maturity such that the first commercial products are becoming available. The technology choice will be briefly reviewed and the reasons for the preferre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d2062324a751762422900ac1c9514f
https://doi.org/10.1016/s0040-6090(98)01176-6
https://doi.org/10.1016/s0040-6090(98)01176-6
Autor:
David J. Mcculloch, J. P. Gowers, Stanley D. Brotherton, Michael J. Trainor, John R. A. Ayres
Publikováno v:
Journal of Applied Physics. 82:4086-4094
The influence of film thickness and incident excimer laser energy density on the properties of poly-Si thin film transistors has been investigated and a coherent pattern of behavior has been identified which establishes controlled melt-through of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af295ddcbb4a899fb778ed65bb0133fa
https://doi.org/10.1063/1.365719
https://doi.org/10.1063/1.365719
Autor:
S.D. Brotherton, Carole Anne Fisher, John R. A. Ayres, Frank W. Rohlfing, J. P. Gowers, David J. Mcculloch
Publikováno v:
MRS Proceedings. 621
There is interest in reducing the shot number in the poly-Si laser crystallisation process in order to improve its throughput. Two distinct shot number dependent effects have been identified, which are both laser intensity dependent. The critical las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::482a633df75bcd86183d9ed77aa04fb3
https://doi.org/10.1557/proc-621-q7.1.1
https://doi.org/10.1557/proc-621-q7.1.1
Publikováno v:
IEE Colloquium on Materials for Displays.
The application of poly-Si TFTs to flat panel displays will be briefly presented and the techniques available for the formation of poly-Si thin films will be reviewed in terms of the resulting material and device properties. As will be demonstrated,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed8ceec70450bfcb06466f4d8479a3a0
https://doi.org/10.1049/ic:19950976
https://doi.org/10.1049/ic:19950976
Autor:
R. Pook, John R. A. Ayres, Alex Henzen, A. D. Pearson, Martin John Edwards, Nigel D. Young, Michael J. Trainor
Publikováno v:
Journal of the Society for Information Display. 10:305
A highly integrated low-temperature polysilicon AMLCD has been designed that operates from a 3-V power supply and has a low-voltage digital interface. This has been achieved by reducing the threshold voltage of the TFTs and integrating digital column
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865391abf52b528c885caddb6f36114f
https://doi.org/10.1889/1.1827882
https://doi.org/10.1889/1.1827882
Publikováno v:
Japanese Journal of Applied Physics. 37:1721
A new physical model based on two dimensional simulations for high quality laser re-crystallised poly-Si thin film transistors is presented. It has been shown that to adequately explain the improved subthreshold slope and the lack of saturation of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91af8e9cc0c1009e193927e9eca0b596
https://doi.org/10.1143/jjap.37.1721
https://doi.org/10.1143/jjap.37.1721
Publikováno v:
Journal of Applied Physics. 79:895
Control of leakage current in autoregistered columnar and a solid phase crystallized poly‐Si thin‐film transistors(TFTs) is discussed. For n‐channel TFTs, two parasitic leakage current paths, due to bulk conduction and back interface conduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab4202041315e56552315854142b4f69
https://doi.org/10.1063/1.360869
https://doi.org/10.1063/1.360869
Publikováno v:
Journal of Applied Physics. 62:1826-1832
Defect impurity levels have been examined in copper‐diffused p‐and n‐type silicon using deep level transient spectroscopy. Levels at Ev+0.09, Ev+0.23, and Ev+0.42 eV have been observed in both types of material, although the deeper levels were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd749e881109dc64a9a8583e7a6b04a9
https://doi.org/10.1063/1.339564
https://doi.org/10.1063/1.339564
Publikováno v:
Journal of Electronic Materials. 18:173-184
An examination of shallow pre-amorphisedp + n junctions in silicon has revealed three distinct defect related phenomena determined largely by the annealing temperature and relative location of the junction and the amorphous-crystalline (α-c) boundar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08539e06fba2c4d4f5e10a3433e614c9
https://doi.org/10.1007/bf02657405
https://doi.org/10.1007/bf02657405