Zobrazeno 1 - 7
of 7
pro vyhledávání: '"John Poate"'
Publikováno v:
Pore Scale Phenomena. :i-ix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ca8030df1937a1fa14b0d93e7381130
https://doi.org/10.1142/9789814623063_fmatter
https://doi.org/10.1142/9789814623063_fmatter
Publikováno v:
Pore Scale Phenomena. :475-482
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb66bda117d4bd663fee8a0f2e652b4
https://doi.org/10.1142/9789814623063_bmatter
https://doi.org/10.1142/9789814623063_bmatter
Autor:
Guo-Ping Ru, Aditya Agarwal, John Poate, Wayne Holland, Xin-Ping Qu, Yu-Long Jiang, Bing-Zong Li, Khalid Hossain
Publikováno v:
Journal of Electronic Materials. 35:937-940
Redistribution of arsenic (As) during silicidation of a 13-nm Ni film on an n+/p junction at 450°C is investigated. NiSi formation is observed by x-ray diffraction, micro-Raman scattering spectroscopy, and Rutherford backscattering spectroscopy (RBS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6855068a66c973b4355e39917c83ed3b
https://doi.org/10.1007/bf02692550
https://doi.org/10.1007/bf02692550
Autor:
John Poate, Wei Huang, Christophe Detavernier, Aditya Agarwal, Gary Cai, Yu-Long Jiang, Guo-Ping Ru, Xin-Ping Qu, R. L. Van Meirhaeghe, Bing-Zong Li
Publikováno v:
Semiconductor Science and Technology. 20:716-719
This paper investigates the electrical characteristics of NiSi Schottky barrier diodes (SBD). A single-step rapid thermal process (RTP) and a two-step RTP were employed to form the SBDs. The diode structures were designed so as to minimize edge leaka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a84beb895e1c45b04a04bee112da1166
https://doi.org/10.1088/0268-1242/20/8/011
https://doi.org/10.1088/0268-1242/20/8/011
Publikováno v:
World Scientific Series in Nanoscience and Nanotechnology ISBN: 9789814623056
Pore Scale Phenomena: Frontiers in Energy and Environment
Pore Scale Phenomena: Frontiers in Energy and Environment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fab76157b8db2580a34b63bd6c1bd99
https://doi.org/10.1142/9305
https://doi.org/10.1142/9305
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:vii-viii
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f85b76a57c091c98395849d8e48e8a7
https://doi.org/10.1016/j.nimb.2005.06.001
https://doi.org/10.1016/j.nimb.2005.06.001
Autor:
Yu-Long Jiang, Guo-Ping Ru, Wei Huang, Xin-Ping Qu, Bing-Zong Li, Aditya Agarwal, Gary Cai, John Poate, Christophe Detavernier and R L Van Meirhaeghe
Publikováno v:
Semiconductor Science & Technology; Aug2005, Vol. 20 Issue 8, p716-719, 4p