Zobrazeno 1 - 10
of 111
pro vyhledávání: '"John P. Prineas"'
Autor:
John P. Prineas, David A. Montealegre, Weitao Dai, Katrina N. Schrock, Logan M. Nichols, Matthew Z. Bellus, Alex C. Walhof
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XIX.
Publikováno v:
IEEE Sensors Journal. 21:20200-20209
One approach to improving nitrogen fertilizer use efficiency in crop production is to use infrared (IR) soil nitrate sensors to analyze soil nitrate and then spatially modulate fertilizer application rates. The most commonly used Fourier transform IR
Publikováno v:
Light-Emitting Devices, Materials, and Applications XXVI.
Autor:
John P. Prineas, Aaron J. Muhowski, A. M. Muellerleile, David A. Montealegre, Jonathon T. Olesberg, Cassandra L. Bogh
Publikováno v:
ACS Applied Electronic Materials. 2:2638-2643
Low extraction efficiencies continue to be a source of parasitic heating and decreased performance in infrared light-emitting diodes. Research into metasurfaces and the advance of methods used to f...
Publikováno v:
Nano Letters. 19:4272-4278
We report on carrier recombination within self-catalyzed InAs/InAlAs core-shell nanowires (NWs), disentangling recombination rates at the ends, sidewalls, and interior of the NWs. Ultrafast optical pump-probe spectroscopy measurements were performed
Autor:
Joshua Marks, Miguel Hernandez, Peyman Barakhshan, Fouad Kiamilev, John P. Prineas, Garrett A. Ejzak, Edwid Koerperick, Kassem Nabha
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 3, Pp 1-10 (2019)
Infrared scene projectors using LEDs instead of resistor arrays are a new technology that is gaining popularity within the infrared projection community. This paper describes two approaches to increase spatial resolution, pixel density, and efficienc
Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon
Publikováno v:
Journal of Crystal Growth. 507:46-49
InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were grown and fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb substrates, SLEDs performed better at typical operating conditions due to improved thermal ma
Autor:
Fatima Toor, Lukas Stampfer, John P. Prineas, Kailing Zhang, Gregor Koblmueller, J. Treu, Xinxin Li
Publikováno v:
Nano Letters. 19:990-996
Contactless time-resolved optical pump-probe and external quantum efficiency measurements were performed in epitaxially grown free-standing wurtzite indium arsenide/indium aluminum arsenide (InAs-InAlAs) core-shell nanowires on Si (111) substrate fro
Publikováno v:
2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
We incorporate new four-layer superlattices into cascaded mid-infrared superlattices for improved quantum efficiency, and thinning/roughening of the substrate (emission side) for improved light extraction. Each improves radiance of InAs/GaSb, untextu
Autor:
Cassandra L. Bogh, Aaron J. Muhowski, Michael E. Flatté, David A. Montealegre, Andrew Meullerleile, J.T. Olesberg, John P. Prineas
Publikováno v:
2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID).
High radiance IRLEDs have been achieved, but much of the light created still remains in the device resulting in poor wall-plug efficiencies. Preliminary results presented here show increased light extraction by the addition of a 2D lens to the device