Zobrazeno 1 - 10
of 110
pro vyhledávání: '"John O. Williams"'
Publikováno v:
Journal of Materials Chemistry. 9:2489-2494
A study of the pre-deposition room temperature gas-phase reactions involved in the growth of Ga 2 Se 3 (and/or GaSe) using trimethylgallium (GaMe 3 ) and hydrogen selenide (H 2 Se) was undertaken, using a simple mass spectrometric sampling system on
Publikováno v:
Journal of Molecular Structure: THEOCHEM. 453:181-189
The S–H and C–S bond dissociation energies for simple alkylthiols and dialkylsulphides, along with the S–S bond dissociation energy for dimethyl disulphide, compounds which have been used in the metal–organic chemical vapour deposition (MOCVD
Autor:
David J. Cole-Hamilton, T.L. Ng, John O. Williams, A.C. Wright, L. D Stockton, I.B. Poole, Douglas F. Foster, N. Maung
Publikováno v:
Journal of Crystal Growth. 183:95-98
Di-tertiarybutyl sulphide is an attractive precursor for the growth, using metal-organic vapour-phase epitaxy (MOVPE), of sulphur-based wide band-gap II-VI compounds due to its lower volatility compared to other more commonly used sulphur sources and
Autor:
T.L. Ng, N. Maung, Guanghan Fan, John O. Williams, A.C. Wright, P.F. Heelis, David J. Cole-Hamilton, Douglas F. Foster
Publikováno v:
Journal of Crystal Growth. 170:485-490
The thermal decomposition of di-tertiarybutyl selenide (DtBSe), both alone and in the presence of dimethylzinc (DMZn), was investigated using ex-situ Fourier transform infrared (FTIR) absorption spectroscopy in a low-pressure metalorganic vapour phas
Publikováno v:
ResearcherID
The growth of ZnSe on GaAs by metal organic vapour phase epitaxy (MOVPE) has been studied using reflectance anisotropy spectroscopy (RAS). The RA spectra of ZnSe are significantly different for growth on initially Se- or Zn-exposed GaAs surfaces. The
Publikováno v:
Journal of Crystal Growth. 170:528-532
Epitaxial MgS has been grown by the MOVPE process using bis(methylcyclopentadienyl)magnesium and tertiarybutylthiol precursors on both GaP and GaAs substrates. For substrate temperatures between 450 and 550°C epitaxial layers possessing the rocksalt
Autor:
Dietrich R. T. Zahn, M. von der Emde, T.L. Ng, N. Maung, John O. Williams, I.B. Poole, Guanghan Fan, A.C. Wright
Publikováno v:
Applied Surface Science. :575-579
Due to its luminescence in the blue-green spectral range, Ga 2 Se 3 has become a subject of extensive research. Thin epitaxial Ga 2 Se 3 layers were grown on GaAs(100) and GaP(100) for the first time by metalorganic chemical vapour deposition (MOCVD)
Autor:
V. Offermann, N. Maung, T.L. Ng, M. von der Emde, Guanghan Fan, Dietrich R. T. Zahn, John O. Williams, A.C. Wright, S. Morley, I.B. Poole
Publikováno v:
Scopus-Elsevier
Epitaxial Ga2Se3 layers were grown on GaP (100) and GaAs (100) by metal–organic chemical vapor deposition and the heterovalent exchange reaction, respectively. Measurements of the sample reflectance were carried out in the spectral range from 70 to
Publikováno v:
J. Chem. Soc., Faraday Trans.. 91:3475-3479
The homogeneous thermal decomposition of dimethylzinc (DMZn) in a low-pressure metal–organic vapour phase epitaxy (LP MOVPE) reactor has been investigated as a function of both temperature and reactor pressure in both H2 and He carrier gases, using
Autor:
A. Baggaley, John O. Williams, O. Szczur, Terry King, David A. Leigh, L. E. Davis, J. H. R. Clarke, R. W. Munn, F. R. Mayers, M. M. Shabat, David C. West, A. Mohebati, M. Bishop
Publikováno v:
Molecular Crystals and Liquid Crystals. 235:201-208
Results are presented on the design, preparation and characterization of Langmuir-Blodgett films formed from stearyl (S) derivatives of DAN, MAP and NPP. Molecular dynamics modelling of trilayers composed of simplified molecules reveals buckling at t