Zobrazeno 1 - 10
of 44
pro vyhledávání: '"John N. Helbert"'
Application of silanes for promoting resist patterning layer adhesion in semiconductor manufacturing
Autor:
Naresh Saha, John N. Helbert
Publikováno v:
Journal of Adhesion Science and Technology. 5:905-925
The importance of adhesion science to semiconductor fabrication technology is established with emphasis on lithographic adhesion studies and advances. Phenomenological understandings of silane adhesion promoter treatments developed to solve resist ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10da6facb4a79755edc19ad7000f2b3f
https://doi.org/10.1163/156856191x00297
https://doi.org/10.1163/156856191x00297
Autor:
John N. Helbert, Tony Daou
Publisher Summary The emphasis of this chapter is placed on applications of the technology to the manufacturing of prototype and production integrated circuit devices. Furthermore, a greater emphasis is placed upon empirical resist process developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6d14034f6d01450ebfe420816d4aca
https://doi.org/10.1016/b978-081551444-2.50004-5
https://doi.org/10.1016/b978-081551444-2.50004-5
Publisher Summary The definition of the method to be used for the selection of an optimum lithography system is the purpose of this chapter. There are many factors in the selection process. The primary factor is the technical requirements: Are the eq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6653be39bde53c4e163d741f8030fd42
https://doi.org/10.1016/b978-081551444-2.50003-3
https://doi.org/10.1016/b978-081551444-2.50003-3
Autor:
John N. Helbert, Arnold W. Yanof, A. Daou, Cliff I. Drowley, Clive Hayzelden, James P. Annand, M. Pantel, Carlos L. Ygartua
Publikováno v:
SPIE Proceedings.
The color filter array (CFA) for an image-producing semiconductor device is composed of patterned red-, and green- and blue-colored photoresist structures. CFA photolithography is rather different from that of most semiconductor process levels.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b09bd9389fba56670be869875d2acf16
https://doi.org/10.1117/12.350821
https://doi.org/10.1117/12.350821
Publikováno v:
SPIE Proceedings.
High temperature metal deposition produces large grain size and a highly visible surface morphology due to grain boundaries. When an interconnect layer photoresist pattern is aligned, grainy metal results in noisy signals from optical metrology equip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa39ee39a4a142d03083f4af4ec4ea06
https://doi.org/10.1117/12.275960
https://doi.org/10.1117/12.275960
Publikováno v:
SPIE Proceedings.
Variations in wafer substrate film stacks can have a significant effect upon the resist critical dimension (CD) and exposure level for layers patterned to fabricate advanced four level metal BIMOS devices. In the fabrication of these VLSI devices, pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81c7c1039108d4e01bb2d461a833b320
https://doi.org/10.1117/12.130347
https://doi.org/10.1117/12.130347
Publikováno v:
Advances in Resist Technology and Processing VIII.
The definition and use of contrast in photolithography has been adapted from the science and technology of photographic imaging media. Thus, a high contrast resists/process should allow useful high resolution images to be delineated even from a low c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baddf8be0d00063a05c6824593d138ec
https://doi.org/10.1117/12.46379
https://doi.org/10.1117/12.46379
Autor:
John N. Helbert
This handbook gives readers a close look at the entire technology of printing very high resolution and high density integrated circuit (IC) patterns into thin resist process transfer coatingsùincluding optical lithography, electron beam, ion beam, a
Publikováno v:
Polymer Engineering and Science. 17:414-419
Photolithographic and electron-beam integrated circuit fabrication techniques rely heavily upon differences in polymer resist dissolution (development) rates to produce circuit patterns. We have applied the wide-line NMR, technique, augmented by dyna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb1a9851d3132ea53c94325d2f4d13e
https://doi.org/10.1002/pen.760170617
https://doi.org/10.1002/pen.760170617