Zobrazeno 1 - 10
of 152
pro vyhledávání: '"John N Randall"'
Digital atomic scale fabrication an inverse Moore's Law – A path to atomically precise manufacturing
Autor:
John N. Randall, James H.G. Owen, Ehud Fuchs, Joseph Lake, James R. Von Ehr, Josh Ballard, Erik Henriksen
Publikováno v:
Micro and Nano Engineering, Vol 1, Iss , Pp 1-14 (2018)
There is an exciting opportunity to start a second digital revolution that will supersede the first digital revolution in information technology (IT) as the primary driver of scientific, technological, and economic growth. This new revolution will be
Externí odkaz:
https://doaj.org/article/9e1a33f565f54bfe82b4c1573e00e0b1
Autor:
Ehud Fuchs, James H. G. Owen, Afshin Alipour, Emma L. Fowler, S.O. Reza Moheimani, John N. Randall
Publikováno v:
Novel Patterning Technologies 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::572af1bd5aa0cb241db06b9d90d31658
https://doi.org/10.1117/12.2661599
https://doi.org/10.1117/12.2661599
Autor:
Robert E. Butera, Shashank Misra, Andrew Baczewski, John N. Randall, Steven M. Rinaldi, James H. G. Owen, Ezra Bussmann
Publikováno v:
MRS Bulletin. 46:607-615
A materials synthesis method that we call atomic-precision advanced manufacturing (APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic precision, is making an impact as a powerful prototyping tool for quantum co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d9c33ed6bf3939bfc12ccd5ee675ad
https://doi.org/10.1557/s43577-021-00139-8
https://doi.org/10.1557/s43577-021-00139-8
Publikováno v:
Journal of Vacuum Science & Technology B. 40
In this work, atomic-resolution lithography with a Microelectromechanical-System (MEMS) based Scanning Tunneling Microscope (STM) is demonstrated for the first time. The microscope consists of a commercial UltraHigh-Vacuum (UHV) STM whose regular tip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb9db4061bd55d1996f251141ff5998
https://doi.org/10.1116/6.0001826
https://doi.org/10.1116/6.0001826
Autor:
Alexander Reum, Daniel F. Feezell, Stephan Mecholdt, Mahmoud Behzadirad, John N. Randall, Tito Busani, Ashwin K. Rishinaramangalam, Joshua B. Ballard, Teodor Gotszalk, James H. G. Owen, Ivo W. Rangelow
Publikováno v:
Nano letters. 21(13)
A fundamental understanding and advancement of nanopatterning and nanometrology are essential in the future development of nanotechnology, atomic scale manipulation, and quantum technology industries. Scanning probe-based patterning/imaging technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e530c15a91feabc97b2e04064928fcba
https://pubmed.ncbi.nlm.nih.gov/34192467
https://pubmed.ncbi.nlm.nih.gov/34192467
Publikováno v:
IEEE Transactions on Control Systems Technology. 27:2004-2015
We identify the dynamics of a scanning tunneling microscope (STM) in closed loop and show that the plant dc gain is proportional to the square root of local barrier height (LBH), a quantum mechanical property of the sample and/or tip that affects the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52017374450ddcedbeb99ae238ce88dd
https://doi.org/10.1109/tcst.2018.2844781
https://doi.org/10.1109/tcst.2018.2844781
Autor:
Jeffrey A. Ivie, James Owen, Shashank Misra, Ezra Bussmann, Quinn Campbell, John N. Randall, Scott W. Schmucker, Andrew Baczewski, Robin Santini
Publikováno v:
Proposed for presentation at the 2020 Virtual MRS Fall Meeting & Exhibit held November 27 - December 4, 2020..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d42788d81fd180d579a7b00827142d96
https://doi.org/10.2172/1831369
https://doi.org/10.2172/1831369
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020.
Hydrogen Depassivation Lithography (HDL) is a version of electron beam lithography that uses scanning tunneling microscope (STM) instrumentation to expose a self–developing resist that is a monolayer of H chemisorbed to a Si (100) 2x1 H-passivated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c05ebbbcb8dee32abb5807750b2e31a5
https://doi.org/10.1117/12.2552083
https://doi.org/10.1117/12.2552083
Autor:
Brian McCoy, Joseph Lake, Annjoe Wong-Foy, Ron Pelrine, Joshua B. Ballard, Allen Hsu, Cregg Cowan, William Siu-Keung Chu, John N. Randall
Publikováno v:
Journal of Micro-Bio Robotics. 14:1-16
In this article, we demonstrate diamagnetically levitated milli-robots performing 3D heterogeneous micro-assembly of silicon micro-machined parts and polymer microspheres. Diamagnetically levitated milli-robots, in conjunction with controlled magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67489f4d1942495f60aa15c1364c2f1b
https://doi.org/10.1007/s12213-018-0103-4
https://doi.org/10.1007/s12213-018-0103-4
Autor:
Jeffrey A. Ivie, Ezra Bussmann, Quinn Campbell, R Santini, Andrew Baczewski, Scott W. Schmucker, Shashank Misra, John N. Randall, James H. G. Owen
Publikováno v:
Journal of Physics: Condensed Matter. 33:464001
Atomically precise ultradoping of silicon is possible with atomic resists, area-selective surface chemistry, and a limited set of hydride and halide precursor molecules, in a process known as atomic precision advanced manufacturing (APAM). It is desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d5c2eeda48d0292c8bd4493bd96b642
https://doi.org/10.1088/1361-648x/ac1ddf
https://doi.org/10.1088/1361-648x/ac1ddf