Zobrazeno 1 - 10
of 20
pro vyhledávání: '"John Michael Warlaumont"'
Low dielectric constant nanocomposite thin films based on silica nanoparticle and organic thermosets
Autor:
Qinghuang Lin, Jeffrey C. Hedrick, Wen-Li Wu, Stephen A. Cohen, Hae-Jeong Lee, Brian Wayne Herbst, David P. Klaus, Eva E. Simonyi, Lynne Gignac, John Michael Warlaumont
Publikováno v:
Journal of Polymer Science Part B: Polymer Physics. 45:1482-1493
Low dielectric constant (low-k) nanocomposite thin films have been prepared by spin coating and thermal cure of solution mixtures of one of two organic low-k thermoset prepolymers and a silica nanoparticle with an average diameter of about 8 nm. The
Autor:
A. Bright, David E. Seeger, D. Patel, Karen Petrillo, T.J. Bucelot, P. Agnello, John Michael Warlaumont, Andrew Pomerene, R. Viswanathan, J. Conway, Patricia G. Blauner
Publikováno v:
Microelectronic Engineering. 23:247-252
Fully functional 512Kb static-random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal oxide semiconductor (CMOS) technology using compact storage ring X-ray
Autor:
Steven C. Nash, F. Volkringer, Richard French, George J. Collini, Robert H. Fair, Phil Sa, Ben R. Vampatella, Ronald A. DellaGuardia, Chet Wasik, George G. Gifford, V. Nastasi, John Michael Warlaumont, Lars W. Liebmann, David E. Seeger, Denise M. Puisto, Angela C. Lamberti, Thomas Zell, Janet M. Rocque
Publikováno v:
SPIE Proceedings.
This paper describes results achieved from the fabrication of 64Mb DRAM chips using x-ray lithography for the gate level. Three lots were split at the gate level for exposure with either Micrascan 92 at IBM's Advanced Semiconductor Technology Center
Autor:
A. Bright, Andrew Pomerene, J. Conway, R. Viswanathan, T.J. Bucelot, David E. Seeger, D. Patel, Patricia G. Blauner, P.D. Agnello, Karen Petrillo, John Michael Warlaumont
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2910
Functional 512K static random access memory (SRAM) devices containing more than 3.6 million transistors have been successfully fabricated in a 0.25 μm complementary metal–oxide semiconductor technology using compact storage ring x‐ray lithograph
Autor:
D. E. Andrews, M. Q. Barton, J. Uythoven, A. I. C. Smith, J. A. Leavey, V. C. Kempson, N. Crosland, K. W. Kukkonen, J. M. Oberschmidt, C. Wasik, M. N. Wilson, M. C. Townsend, J. P. Silverman, A. J. Weger, M. C. Wilson, A. R. Jorden, R. Webber, A. D. Wilson, C. N. Archie, John Michael Warlaumont, J. C. Schouten, R. J. Anderson, R. W. Hill, J. I. Granlund, R. Palmer, L. G. Lesoine, A. E. Palumbo
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:3224
During 1991 the Oxford Instruments’ compact synchrotron x‐ray source Helios was installed at IBM’s Advanced Lithography Facility, following factory tests in Oxford during 1990. The machine has met or exceeded all performance specifications at t
Autor:
John Michael Warlaumont
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 246:687-694
An evaluation of specification for storage rings designed for X-ray lithography has been done, based on our experience with X-ray lithography at the NSLS VUV ring at Brookhaven National Laboratory. The useful flux (from a lithography standpoint) avai
Autor:
H. Voelker, R. Viswanathan, D. Crockatt, David E. Seeger, Raul E. Acosta, John Michael Warlaumont, Robert H. Fair, Juan R. Maldonado, O. Vladirmirsky, Inna V. Babich, A. D. Wilson, F. J. Hohn
Publikováno v:
Microelectronic Engineering. 9:93-96
Full sets (8 levels each) of X-ray masks have been made and characterized for overlay, resolution and line- width control. These mask sets have been successfully used to fabricate fully scaled 0.5 μm MOS circuits. The mask absorber included, in addi
Publikováno v:
Microelectronic Engineering. 9:97-100
To test the line width control of typical resist systems in x-ray lithography, we have developed and utilized x-ray resist processes for all levels in the fabrication of NMOS and CMOS devices with 0.5 μm ground rules. Results from line width control
Autor:
D. Katcoff, J. P. Silverman, B. Hill, A. D. Wilson, L. K. Wang, John Michael Warlaumont, Vincent Dimilia, Robert P. Rippstein, L. C. Hsia, R. Devenuto
Publikováno v:
Microelectronic Engineering. 9:101-104
Functional NMOS and CMOS circuits with fully-scaled 0.5 μm ground rules have been fabricated using synchroton radiation X-ray lithography for all device levels. The exposures were done at the VUV storage ring of the National Synchrotron Light Source
Publikováno v:
Nuclear Instruments and Methods in Physics Research. 222:291-301
X-ray lithography is a shadow printing technique which uses X-rays to transfer a pattern from a mask into a resist-coated wafer. Synchrotron radiation from a storage ring has advantages over the radiation from conventional X-ray sources for this purp