Zobrazeno 1 - 3
of 3
pro vyhledávání: '"John McElearney"'
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68efc89c82e752b989b47bc2dc1a8dc8
https://doi.org/10.1103/physrevmaterials.6.110201
https://doi.org/10.1103/physrevmaterials.6.110201
Publikováno v:
Journal of Electronic Materials. 48:3376-3382
GaAs1−xBix has been grown by solid-source molecular beam epitaxy using varying substrate rotation rates. Changes in local bismuth saturation were studied by varying the Bi/Ga pressure ratio across the wafer. Films were grown on both GaAs and InGaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4763480e48236590d95122ec345fa29
https://doi.org/10.1007/s11664-019-06949-6
https://doi.org/10.1007/s11664-019-06949-6
Publikováno v:
Semiconductor Science and Technology. 35:105006
Films of n-GaAs1-xBix films were grown via molecular beam epitaxy using both Si and Te as dopant sources. Electron mobility was characterized by Hall effect measurements as a function of carrier concentration and Bi content for films with bismuth fra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15338b61c2456f6c2676b371ce76952a
https://doi.org/10.1088/1361-6641/aba08e
https://doi.org/10.1088/1361-6641/aba08e