Zobrazeno 1 - 10
of 16
pro vyhledávání: '"John Martin Shannon"'
Autor:
Karl-Friedrich Klein, Rick Timmerman, Bode Kuehn, Rahul Yadav, John Martin Shannon, Philipp Raithel
Publikováno v:
Laser-Induced Damage in Optical Materials 2018: 50th Anniversary Conference.
Reductions of UV transmission in silica-based multimode fibers, with low-OH or high-OH synthetic silica core, due to optically active UV defects will be shown using pulsed 355 nm (3rd harmonics) and, for the first time, 213 nm (5th harmonics) Nd-YAG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cca2c50af52661031e8368c6ad2fe06
https://doi.org/10.1117/12.2502114
https://doi.org/10.1117/12.2502114
Publikováno v:
ECS Transactions. 33:419-424
The performance benefits of using source-gated transistors (SGTs) in large-area analog electronic circuits are examined by both experiments and numerical simulations. As one of the key blocks in analog electronics, the current mirror circuit is taken
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05448fce1166a1a464226b7bd9dbcd8c
https://doi.org/10.1149/1.3481265
https://doi.org/10.1149/1.3481265
Publikováno v:
Journal of Applied Physics. 82:4800-4804
Electronic properties of silicon rich amorphous silicon alloys were investigated using diode structures and thin films on Corning 7059 glass following the implantation of 1 MeV Ge+ ions with doses up to 2.4×1015 ions/cm2. Optical absorption measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c0ad9c042f9dc7adf7713df1f2ca16
https://doi.org/10.1063/1.366338
https://doi.org/10.1063/1.366338
Publikováno v:
Applied Physics Letters. 80:4154-4156
We show field emission from excimer laser crystallized (ELC) hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03deb68c131bb52d244198d77630a95a
https://doi.org/10.1063/1.1482141
https://doi.org/10.1063/1.1482141
Publikováno v:
SPIE Proceedings.
A new silica-based fiber design has been developed which exhibits improved transmission properties over a very wide spectral range. In the near infrared wavelength region, the attenuation of the new fiber is similar to standard near infrared fibers h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5beed3d4ac628006718db651eb1c33e
https://doi.org/10.1117/12.883227
https://doi.org/10.1117/12.883227
Amorphous carbon films containing no hydrogen were irradiated with a pulsed UV laser in vacuum. Raman spectroscopy indicates an increase in the quantity of sp(2) clustering with the highest laser energy density and a commensurate reduction in resisti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60ff646242429251a98355f0e946ec5e
https://surrey.eprints-hosting.org/88/
https://surrey.eprints-hosting.org/88/
Polycrystalline gallium nitride films, 100nmto1μm thick, were deposited under a range of conditions. Substrate electrode temperatures during sputtering were varied from room temperature to 450°C, the pressure from 0.15to6.0Pa, the nitrogen fraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cca4cfb49cda10e2c05e46165f3da5ec
https://surrey.eprints-hosting.org/445/
https://surrey.eprints-hosting.org/445/
The room-temperature photoluminescence intensity and conductivity of GaN films grown by reactive rf sputtering were improved by the addition of hydrogen during growth. The differential resistivity decreased by two orders of magnitude when 2.4% H2 was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c840444ac1f7f19e54234a814992a4fc
https://surrey.eprints-hosting.org/239/
https://surrey.eprints-hosting.org/239/
The electrical properties of hydrogenated amorphous silicon (a‐Si:H) metal–semiconductor–metal (MSM) devices are investigated as a function of Si bombardment dose prior to and after annealing. We observe that conduction in unbombarded devices i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3401388b6bc9c33f9d149aa33cf6cc60
https://surrey.eprints-hosting.org/394/
https://surrey.eprints-hosting.org/394/
Publikováno v:
Applied Physics Letters. 65:2978-2980
It is shown that the drift in the current–voltage characteristics of silicon‐rich amorphous silicon nitride metal–semiconductor–metal diodes can be explained by a mechanism whereby electron trapping centers are created via hole–electron rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f38ce9e353b70ee868aab6cf980561d9
https://doi.org/10.1063/1.112482
https://doi.org/10.1063/1.112482