Zobrazeno 1 - 10
of 36
pro vyhledávání: '"John M. Aitken"'
Publikováno v:
Antibiotics, Vol 13, Iss 2, p 158 (2024)
Mycobacterium avium ssp. paratuberculosis (MAP) is the cause of Johne’s disease (JD), which is a chronic infectious gastrointestinal disease of ruminants and is often fatal. In humans, MAP has been associated with Crohn’s disease (CD) for over a
Externí odkaz:
https://doaj.org/article/81570d039c6c4a69aaa1fc9e35a3d8aa
Publikováno v:
IEEE Transactions on Electron Devices. 58:3089-3098
During the study of time-dependent dielectric breakdown (TDDB) of back-end-of-line low- k dielectrics, accurate statistical and area-scaling models are important for the final reliability lifetime projection. The extrapolated product lifetime from hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ebd3d87795918b4b79d09828abf0ab
https://doi.org/10.1109/ted.2011.2159120
https://doi.org/10.1109/ted.2011.2159120
Autor:
John M. Aitken
Publikováno v:
Meta Gene. 17:S8
There is increasing evidence that bacteria may play important roles in the triggering of emerging diseases, including in autoimmune disease, attention deficit disorder (ADD), control of gut diseases, and depression. Bacterial presence in a susceptibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2603120cb7d1878e6856247ae4cd900b
https://doi.org/10.1016/j.mgene.2018.05.025
https://doi.org/10.1016/j.mgene.2018.05.025
Publikováno v:
Microelectronics Reliability. 48:1375-1383
With the wide application of low-k and ultra-low-k dielectric materials at the 90 nm technology node and beyond, the long-term reliability of such materials is rapidly becoming a critical challenge for technology qualification. Low-k time-dependent d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59dc1345799f0b228604c9133f9fa9d
https://doi.org/10.1016/j.microrel.2008.06.037
https://doi.org/10.1016/j.microrel.2008.06.037
Autor:
K. Kolvenback, Steven W. Mittl, Dan Mocuta, Fen Chen, Yanfeng Wang, John M. Aitken, M. Shinosky, Roger A. Dufresne, William K. Henson
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables present in the data due to the involvement of many process steps such as lithography, etch, CMP, cleaning, and thin film deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a59c7b437250a91a9671275be05e1f3
https://doi.org/10.1109/irps.2013.6532104
https://doi.org/10.1109/irps.2013.6532104
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Low-k time dependent dielectric breakdown (TDDB) is commonly considered an important reliability issue. It has been proposed that there is an interrelation of field and temperature dependence between TDDB thermal activation energies and field acceler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac54697135b813f16c79f1bda8fe8689
https://doi.org/10.1109/irps.2013.6531967
https://doi.org/10.1109/irps.2013.6531967
Autor:
T. Kane, Stephan A. Cohen, M. Shinosky, Dimitri R. Kioussis, Yun-Yu Wang, Chih-Chao Yang, Elbert E. Huang, John M. Aitken, Jeffrey P. Gambino, Fen Chen, Daniel C. Edelstein
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
During technology development, the study of low-k TDDB is important for assuring robust chip reliability. It has been proposed that the fundamentals of low-k TDDB are closely correlated with the leakage conduction mechanism of low-k dielectrics. In a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95f1b9ce88dc8c2b54225a9884edf524
https://doi.org/10.1109/irps.2012.6241802
https://doi.org/10.1109/irps.2012.6241802
Autor:
M. Shinosky, Dan Mocuta, Brent A. Anderson, Yun-Yu Wang, F. Chen, John M. Aitken, Kai D. Feng, Steve Mittl, R. Kontra, Ann Swift, Mahender Kumar, Terence Kane, William K. Henson, Yanfeng Wang, Di-an Li, Emily R. Kinser
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
The minimum insulator spacing between the polysilicon control gate (PC) and the diffusion contacts (CA) in advanced VLSI circuits is aggressively shrinking due to continuous technology scaling. Meanwhile, rapid adoptions of new materials such as meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c10df5d79e192414b38259b2498dd15c
https://doi.org/10.1109/irps.2012.6241865
https://doi.org/10.1109/irps.2012.6241865
Autor:
Frieder H. Baumann, Ravi Achanta, John M. Aitken, F. Chen, Matthew Angyal, P. McLaughlin, Stephan A. Cohen, Griselda Bonilla, M. Shinosky, A. Simon, Baozhen Li, C. Parks
Publikováno v:
2011 International Reliability Physics Symposium.
With the continuing aggressive scaling of interconnect dimensions and introduction of new lower k materials, dielectric TDDB reliability margin is greatly reduced. In this paper, a comprehensive investigation on an abnormal low-k TDDB characteristic,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3507fca8317429348bf2d6cdd33debdd
https://doi.org/10.1109/irps.2011.5784466
https://doi.org/10.1109/irps.2011.5784466
Autor:
Kai Zhao, D. Badami, Eduard A. Cartier, Rahul M. Rao, R. Bolam, K. Das, Dimitris P. Ioannou, Aditya Bansal, Barry Linder, John M. Aitken, J. Greg Massey, Steven W. Mittl, G. La Rosa, Jae-Joon Kim, Michael J. Hauser, James H. Stathis
Publikováno v:
2011 International Reliability Physics Symposium.
A robust reliability characterization / modeling approach for accurately predicting Bias Temperature Instability (BTI) induced circuit performance degradation in High-k Metal Gate (HKMG) CMOS is presented. A series of device level stress experiments
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd598f27d2de69ae9facf7695b8f98c
https://doi.org/10.1109/irps.2011.5784559
https://doi.org/10.1109/irps.2011.5784559