Zobrazeno 1 - 10
of 39
pro vyhledávání: '"John Lundsgaard Hansen"'
Autor:
Tim Böckendorf, Jan Kirschbaum, Felix Kipke, Dominique Bougeard, John Lundsgaard Hansen, Arne Nylandsted Larsen, Matthias Posselt, Hartmut Bracht
Publikováno v:
AIP Advances, Vol 14, Iss 6, Pp 065129-065129-8 (2024)
Self-diffusion in amorphous germanium is studied at temperatures between 325 and 370 °C utilizing amorphous isotopically controlled germanium multilayer structures. The isotope multilayer is epitaxially grown on a single crystalline germanium-on-ins
Externí odkaz:
https://doaj.org/article/f4eea55ba3194e96bc0261ac9624a586
Autor:
Ruixing Feng, Felipe Kremer, David J. Sprouster, Sahar Mirzaei, Stefan Decoster, Chris J. Glover, Scott A. Medling, John Lundsgaard Hansen, Arne Nylandsted-Larsen, Salvy P. Russo, Mark C. Ridgway
Publikováno v:
Materials Research Letters, Vol 5, Iss 1, Pp 29-34 (2017)
In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si0.35Ge0.65, by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray abso
Externí odkaz:
https://doaj.org/article/eefc4c9e29444e4d9b3ccf1b28c9ebff
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045202-045202-6 (2017)
The diffusivity of erbium in the anatase phase of titanium dioxide (TiO2) has been studied for various temperatures ranging from 800 °C to 1, 000 °C. Samples of TiO2, with a 10 nm thick buried layer containing 0.5 at% erbium, were fabricated by
Externí odkaz:
https://doaj.org/article/305806d135c244b3b6a4c1422b82a790
Autor:
Søren Roesgaard, Jacques Chevallier, Peter I. Gaiduk, John Lundsgaard Hansen, Pia Bomholt Jensen, Arne Nylandsted Larsen, Axel Svane, Peter Balling, Brian Julsgaard
Publikováno v:
AIP Advances, Vol 5, Iss 7, Pp 077114-077114-6 (2015)
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1−x−ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 ∘C to 90
Externí odkaz:
https://doaj.org/article/8f1de2ba40134b019ceabfd066790842
Autor:
Manuel Radek, Bartosz Liedke, Bernd Schmidt, Matthias Voelskow, Lothar Bischoff, John Lundsgaard Hansen, Arne Nylandsted Larsen, Dominique Bougeard, Roman Böttger, Slawomir Prucnal, Matthias Posselt, Hartmut Bracht
Publikováno v:
Materials, Vol 10, Iss 7, p 813 (2017)
Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical
Externí odkaz:
https://doaj.org/article/1a56d01bc006496cab67af0ba7a4bffb
Autor:
Mina Mirsafaei, Horst-Günter Rubahn, Nadine Witkowski, Harish Lakhotiya, Morten Madsen, Brian Julsgaard, Pia Jensen, Peter Balling, Rémi Lazzari, Mehrad Ahmadpour, John Lundsgaard Hansen
Publikováno v:
ACS Applied Energy Materials
ACS Applied Energy Materials, ACS, 2020, 3 (1), pp.253-259. ⟨10.1021/acsaem.9b01454⟩
Mirsafaei, M, Jensen, P B, Ahmadpour, M, Lakhotiya, H, Hansen, J L, Julsgaard, B, Rubahn, H G, Lazzari, R, Witkowski, N, Balling, P & Madsen, M 2020, ' Sputter-Deposited Titanium Oxide Layers as Efficient Electron Selective Contacts in Organic Photovoltaic Devices ', ACS Applied Energy Materials, vol. 3, no. 1, pp. 253-259 . https://doi.org/10.1021/acsaem.9b01454
ACS Applied Energy Materials, ACS, 2020, 3 (1), pp.253-259. ⟨10.1021/acsaem.9b01454⟩
Mirsafaei, M, Jensen, P B, Ahmadpour, M, Lakhotiya, H, Hansen, J L, Julsgaard, B, Rubahn, H G, Lazzari, R, Witkowski, N, Balling, P & Madsen, M 2020, ' Sputter-Deposited Titanium Oxide Layers as Efficient Electron Selective Contacts in Organic Photovoltaic Devices ', ACS Applied Energy Materials, vol. 3, no. 1, pp. 253-259 . https://doi.org/10.1021/acsaem.9b01454
Organic photovoltaics (OPVs) has recently reached power conversion efficiencies of 17.3%, making it a green technology that not only offers short energy payback times and diverse photovoltaic integration schemes, but also can deliver competitive powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7fa2587f7ac0f81667ad33a7fa564eb1
https://hal.archives-ouvertes.fr/hal-02995171
https://hal.archives-ouvertes.fr/hal-02995171
Autor:
Jan K. Prüßing, Tim Böckendorf, Felix Kipke, Jiushuai Xu, Prabowo Puranto, John Lundsgaard Hansen, Dominique Bougeard, Erwin Peiner, Hartmut Bracht
Publikováno v:
Prüßing, J K, Böckendorf, T, Kipke, F, Xu, J, Puranto, P, Lundsgaard Hansen, J, Bougeard, D, Peiner, E & Bracht, H 2022, ' Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection ', Journal of Applied Physics, vol. 131, no. 7, 075702 . https://doi.org/10.1063/5.0078006
Phosphorus and boron diffusion in silicon at temperatures between 900 and 1050 °C was studied both in bulk and nanostructured samples by means of scanning spreading resistance microscopy. The dopant diffusion from highly doped silicon substrates int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed294c6d5bf89f10c9ed87c8c3a71412
https://doi.org/10.1063/5.0078006
https://doi.org/10.1063/5.0078006
Autor:
Arne Nylandsted Larsen, John Lundsgaard Hansen, R. R. Juluri, Peter I. Gaiduk, Brian Julsgaard
Publikováno v:
Juluri, R R, Gaiduk, P, Hansen, J L, Larsen, A N & Julsgaard, B 2018, ' Impact of a SiGe interfacial layer on the growth of a SiC layer on Si with voids at the interface ', Thin Solid Films, vol. 662, pp. 103-109 . https://doi.org/10.1016/j.tsf.2018.07.036
A comparative study is performed of the properties of SiC films, grown in the presence and absence of a Si1-xGex interfacial layer on top of a Si(111) substrate with x = 0.23. The SiC film growth is carried out at 960 degrees C by carbonization of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f10e2a165d40ded2deed3f759d630ea9
https://doi.org/10.1016/j.tsf.2018.07.036
https://doi.org/10.1016/j.tsf.2018.07.036
Autor:
Brian Julsgaard, Peter Kristensen, John Lundsgaard Hansen, R. R. Juluri, Kjeld Møller Pedersen
Publikováno v:
Applied Physics B. 125
Unfortunately, the first author name was incorrectly published in the original publication.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::476b30eb4290160cacf4b89d94c05f3b
https://doi.org/10.1007/s00340-019-7283-z
https://doi.org/10.1007/s00340-019-7283-z
Autor:
Nadine Witkowski, Andreas K. Schmid, Brian Julsgaard, Mina Mirsafaei, Horst-Günter Rubahn, Peter Balling, John Lundsgaard Hansen, André Luis Fernandes Cauduro, Morten Madsen, Mehrad Ahmadpour
Publikováno v:
Proceedings of the 1st Interfaces in Organic and Hybrid Thin-Film Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b8c70e5042a99050d126629c1daf4c1
https://doi.org/10.29363/nanoge.inform.2019.039
https://doi.org/10.29363/nanoge.inform.2019.039