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pro vyhledávání: '"John L, Lyons"'
Autor:
John L. Lyons
Critical questions of purpose, quality, choice, and access in public education have been key in processes of neoliberal globalization spanning the last four decades. The growing privatization of schools around the world has resulted in fundamental ch
Autor:
Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Ymir Kalmann Frodason, Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle, Aaron Arehart, Steven A. Ringel
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111110-111110-9 (2023)
The ability to achieve highly resistive beta-phase gallium oxide (β-Ga2O3) layers and substrates is critical for β-Ga2O3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately dee
Externí odkaz:
https://doaj.org/article/ebff1caf478145fab8f899b2351bdd6f
Autor:
Moritz Gramlich, Michael W. Swift, Carola Lampe, John L. Lyons, Markus Döblinger, Alexander L. Efros, Peter C. Sercel, Alexander S. Urban
Publikováno v:
Advanced Science, Vol 9, Iss 5, Pp n/a-n/a (2022)
Abstract Semiconductor nanoplatelets (NPLs), with their large exciton binding energy, narrow photoluminescence (PL), and absence of dielectric screening for photons emitted normal to the NPL surface, could be expected to become the fastest luminophor
Externí odkaz:
https://doaj.org/article/aae5afd3e4b1483bb8cca686aefcc92c
Publikováno v:
APL Materials, Vol 10, Iss 2, Pp 021103-021103-7 (2022)
Gallium oxide when doped with Mg becomes semi-insulating and can be useful for power electronic devices. The present work investigates optical transitions of neutral Mg (MgGa0) using photoinduced electron paramagnetic resonance spectroscopy, a variat
Externí odkaz:
https://doaj.org/article/878432099ac44cb68fd7a2b192d0ccf2
Autor:
John L. Lyons, Chris G. Van de Walle
Publikováno v:
npj Computational Materials, Vol 3, Iss 1, Pp 1-10 (2017)
Abstract Recent developments in theoretical techniques have significantly improved the predictive power of density-functional-based calculations. In this review, we discuss how such advancements have enabled improved understanding of native point def
Externí odkaz:
https://doaj.org/article/657d76a596534112a515e6059bee56eb
Autor:
Michael W. Swift, John L. Lyons
Publikováno v:
The Journal of Physical Chemistry C. 126:12294-12300
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022519-022519-6 (2019)
β–Ga2O3 is a wide-bandgap material with promising applications in high-power electronics. While n-type doping is straightforward, p-type doping is elusive, with only deep acceptors available. We explore the properties of these acceptors, from the
Externí odkaz:
https://doaj.org/article/6e652d63a8334eb492004ff452555bd8
Autor:
John L. Lyons
Publikováno v:
Oxide-based Materials and Devices XIV.
Autor:
John L. Lyons
Publikováno v:
Chemistry of Materials. 33:6200-6205
Publikováno v:
Nanoscale. 13:16769-16780
The Rashba effect has been proposed to give rise to a bright exciton ground state in halide perovskite nanocrystals (NCs), resulting in very fast radiative recombination at room temperature and extremely fast radiative recombination at low temperatur