Zobrazeno 1 - 10
of 30
pro vyhledávání: '"John K. Lowell"'
Autor:
Alexey Melnikov, John K. Lowell, Michael W Downer, Jerry I. Dadap, A.A. Fedyanin, Oleg A. Aktsipetrov, M. H. Anderson, X. F. Hu
Publikováno v:
Thin Solid Films. 294:231-234
D.c. electric field induced second-harmonic generation (SHG) spectroscopy of the Si(001)–SiO2 interface was studied both experimentally and theoretically. To describe the experimental results the general phenomenological model of d.c. induced SHG i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf0aa952074cd1cbb2cb128b23245a26
https://doi.org/10.1016/s0040-6090(96)09217-6
https://doi.org/10.1016/s0040-6090(96)09217-6
Publikováno v:
Journal of The Electrochemical Society. 143:2870-2875
Copper contamination of silicon wafers from 50 :1 HF solutions containing 0 to 100 ppb Cu was studied using dc electrochemical techniques. As the level of copper concentration in HF solutions increased, the corrosion current density and corrosion pot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec997313e3a45fec80be2d42f7e169c9
https://doi.org/10.1149/1.1837120
https://doi.org/10.1149/1.1837120
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:1156-1160
The performance standards of plasma‐enhanced chemical vapor deposition (PECVD) oxides increase as device sizes shrink and densities increase for ULSI. Future PECVD dielectric quality may be compromised by the effects of contaminants and/or charged
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6962a8fbc19ea7f4d4e1bca1e7bd5e4d
https://doi.org/10.1116/1.580287
https://doi.org/10.1116/1.580287
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:1145-1155
State-of-the-art femtosecond lasers have the potential to dramatically improve the effectiveness of interface nonlinear optics for diagnosing Si(001) interface characteristics that are relevant to Si microelectronics manufacturing. We present an anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e6d2e30d7d4857dc087afa7ba38f5f2
https://doi.org/10.1109/2944.488693
https://doi.org/10.1109/2944.488693
Autor:
John K. Lowell, Ronald W. Waynant
Publikováno v:
Electronic and Photonic Circuits and Devices ISBN: 9780470544532
This chapter contains sections titled: Manufacturing-Based Simulation: An Overview Micro-Automating Semiconductor Fabrication Robotics Applications in Electronic Manufacturing Sights and Sounds of Chaos Introduction to Implantable Biomedical IC Desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce47a9d4f69db17f4e23492f8b7b00d
https://doi.org/10.1109/9780470544532.ch2
https://doi.org/10.1109/9780470544532.ch2
Autor:
Ronald W. Waynant, John K. Lowell
Publikováno v:
Electronic and Photonic Circuits and Devices ISBN: 9780470544532
This chapter contains sections titled: Optoelectronic Integration: A Technology for Future Telecommunication Systems Photonic Time-Division Switching Systems Ultrashort Light Pulses Optical Interconnects Speed Interprocessor Nets
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::433402b33c45f6917e74b52e6e5b68bb
https://doi.org/10.1109/9780470544532.ch6
https://doi.org/10.1109/9780470544532.ch6
Autor:
Ronald W. Waynant, John K. Lowell
Publikováno v:
Electronic and Photonic Circuits and Devices ISBN: 9780470544532
This chapter contains sections titled: Modeling GaAs/AlGaAs Devices: A Critical Review Overview Latchup in CMOS Technologies Porous Silicon Techniques for SOI Structures Ferroelectric Materials for 64 Mb and 256 Mb DRAMs ]]>
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65d2e411e878d756412f7e5e0bf32238
https://doi.org/10.1109/9780470544532.ch1
https://doi.org/10.1109/9780470544532.ch1
Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient
Publikováno v:
Applied Physics Letters. 70:384-386
The vertical scaling of oxide thickness in the ultra large scale integrated era places stringent requirements on oxide quality. In this letter we report optimization studies in the growth of ultrathin oxynitrides in the sub 3 nm range. The oxynitride
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4357ad1c084f48c9f229a27f3fdc2091
https://doi.org/10.1063/1.118389
https://doi.org/10.1063/1.118389
Autor:
Oleg A. Aktsipetrov, M. H. Anderson, Jerry I. Dadap, John K. Lowell, X. F. Hu, Michael C. Downer
Publikováno v:
Physical Review B. 53:R7607-R7609
We report the dependence of the second-harmonic spectrum of Si(001) metal-oxide-semiconductor structures on applied bias in the vicinity of the direct two-photon ${E}_{1}$ transition. Bulk nonlinear electroreflectance contributions peak at 3.37 eV; t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1125efc81bef63e979477cd298eb3263
https://doi.org/10.1103/physrevb.53.r7607
https://doi.org/10.1103/physrevb.53.r7607
Publikováno v:
Applied Physics Letters. 64:2139-2141
Femtosecond pulses from a Kerr–Lens mode‐locked Ti:sapphire laser are used to generate second harmonic from a series of native‐oxidized Si(100)/SiO2 and hydrogen‐terminated Si(100) samples prepared with systematically varied interfacial micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f2126428db297888472247e27a2366
https://doi.org/10.1063/1.111711
https://doi.org/10.1063/1.111711