Zobrazeno 1 - 10
of 18
pro vyhledávání: '"John Jarman"'
Autor:
Hannah L. Stern, Qiushi Gu, John Jarman, Simone Eizagirre Barker, Noah Mendelson, Dipankar Chugh, Sam Schott, Hoe H. Tan, Henning Sirringhaus, Igor Aharonovich, Mete Atatüre
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
Optically active spins in solid-state materials hold promise for future quantum technologies. Here, the authors demonstrate optically detected magnetic resonance at room temperature for single defects in a two-dimensional material, hexagonal boron ni
Externí odkaz:
https://doaj.org/article/6ae21ce710964a8780773d08d6708049
Autor:
Hannah L. Stern, John Jarman, Qiushi Gu, Simone Eizagirre Barker, Noah Mendelson, Dipankar Chugh, Sam Schott, Hoe H. Tan, Henning Sirringhaus, Igor Aharonovich, Mete Atature
Publikováno v:
2D Photonic Materials and Devices V.
The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view cathodoluminescence (CL). The sample with the lowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf7a5867361ea3e81750f37f4bc86e85
Autor:
Rachel A. Oliver, Fabien Massabuau, D Nicol, Paul R. Chalker, András Kovács, John Jarman, F Adams, J.W. Roberts
Publikováno v:
Journal of physics / D 54(38), 384001-(2021). doi:10.1088/1361-6463/ac0d28
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics
We present a study of the electrical, structural and chemical properties of Ti contacts on atomic layer deposited α-Ga2O3 film. Ti forms an ohmic contact with α-Ga2O3. The contact performance is highly dependent on the post-evaporation annealing te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0877029fa52e49c6233ea27688965996
https://www.repository.cam.ac.uk/handle/1810/325486
https://www.repository.cam.ac.uk/handle/1810/325486
Autor:
Mark J. Holmes, Yasuhiko Arakawa, Tongtong Zhu, Rachel A. Oliver, Fc-P Massabuau, John Jarman
Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insuffic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d438eb60132336c7a61e25718c947d9
https://strathprints.strath.ac.uk/76861/1/Holmes_etal_APL_2021_Pure_single_photon_emission_from_an_InGaN_GaN_quantum_dot.pdf
https://strathprints.strath.ac.uk/76861/1/Holmes_etal_APL_2021_Pure_single_photon_emission_from_an_InGaN_GaN_quantum_dot.pdf
Autor:
Dylan Dodd, John Jarman
Publikováno v:
Nature biomedical engineering. 4(9)
The oral delivery of a microencapsulated bacterial cocktail into animal models of kidney disease promotes the degradation of nitrogenous waste in the gut, thereby supporting renal function.
Autor:
Florin Udrea, John Jarman, Andrea De Luca, Tongtong Zhu, Rachel A. Oliver, Peter Griffin, Bogdan F. Spiridon, Yingjun Liu
Publikováno v:
Proceedings, Vol 2, Iss 13, p 776 (2018)
This study focuses on the thermal characterization of porous gallium nitride (GaN) usingan extended 3ω method. Porous semiconductor materials provide a solution to the need for on-chipthermal insulation, a fundamental requirement for low-power, high
Autor:
Robert A. Taylor, Tongtong Zhu, Fengzai Tang, Stefan Schulz, Saroj Kanta Patra, Tim J. Puchtler, Claudius Kocher, Rachel A. Oliver, Benjamin P. L. Reid, John Jarman, Tong Wang, Christopher X. Ren
Publikováno v:
2018 IEEE Photonics Conference (IPC).
Single photon sources are a key enabling technology for quantum communications, and in the future more advanced quantum light sources may underpin other quantum information processing paradigms such as linear optical quantum computation. In consideri
Autor:
James Moloney, Fabien Massabuau, Paul R. Chalker, Jirayut Brister, Oliver Tesh, Lana Lee, J.W. Roberts, Serge Karboyan, Martin Kuball, Rachel A. Oliver, Tahmida N. Huq, John Jarman, Manikant Singh
Publikováno v:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Low temperature atomic layer deposition was used to deposit α-Ga2O3 films, which were subsequently annealed at various temperatures and atmospheres. The α-Ga2O3 phase is stable up to 400 °C, which is also the temperature that yields the most inten
Autor:
Paul A. Midgley, John Jarman, Paul R. Chalker, F.C-P. Massabuau, Rachel A. Oliver, Duncan N. Johnstone, J.W. Roberts
Publikováno v:
JOURNAL OF CRYSTAL GROWTH
α-Ga2O3 is a metastable phase of Ga2O3 of interest for wide bandgap engineering since it is isostructural with α-In2O3 and α-Al2O3. α-Ga2O3 is generally synthesised under high pressure (several GPa) or relatively high temperature (∼500 °C). In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edcaadffbe0320dfa6b60c1cb1558906
http://livrepository.liverpool.ac.uk/3076041/1/Roberts_etal_JCG_2018_low_temperature_atomic_layer_deposition_on_sapphire.pdf
http://livrepository.liverpool.ac.uk/3076041/1/Roberts_etal_JCG_2018_low_temperature_atomic_layer_deposition_on_sapphire.pdf