Zobrazeno 1 - 6
of 6
pro vyhledávání: '"John J. Hackenberg"'
Autor:
Victor H. Vartanian, Tianming Bao, Mark Caldwell, Brian McLain, Tab A. Stephens, Omar Munoz, John J. Hackenberg
Publikováno v:
SPIE Proceedings.
Accurate, precise, and rapid three-dimensional (3D) characterization of patterning processes in integrated circuit development and manufacturing is critical for successful volume production. As process tolerances and circuit geometries shrink with ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a38632e97522686699ca7c2a97173c7
https://doi.org/10.1117/12.708813
https://doi.org/10.1117/12.708813
Autor:
M. Jahanbani, S. Murphy, J. Mogab, R. Garcia, Paul A. Grudowski, Colita Parker, J. Conner, Bich-Yen Nguyen, J. Hildreth, H. Desjardins, Jon D. Cheek, L. Prabhu, Victor H. Vartanian, P. Montgomery, John J. Hackenberg, S. Zhang, Brian J. Goolsby, Aaron Thean, S. Venkatesan, R. Noble, David Theodore, D. Eades, Ted R. White, V. Dhandapani, R. Rai, Stefan Zollner, B. E. White
Publikováno v:
Scopus-Elsevier
Uniaxial stressors have been mainly employed for boosting PMOS performance, while it is more difficult to increase NMOS performance using tensile stressors. This results in changing the n:p ratio, which requires circuit layout changes. Enhancing both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4374c45132a6872abaa958490fd0c29
https://doi.org/10.1109/istdm.2006.1716039
https://doi.org/10.1109/istdm.2006.1716039
Autor:
M. Jahanbani, Jon D. Cheek, N. Cave, S.j. Lian, Konstantin V. Loiko, Mehul D. Shroff, Chi-Hsi Wu, Stanley M. Filipiak, Xiang-Zheng Bo, H.C. Tuan, M. Azrak, Paul A. Grudowski, Wen-Jya Liang, Vance H. Adams, Sinan Goktepeli, Venkat R. Kolagunta, M. Foisy, John J. Hackenberg
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
We report, for the first time, on the 2D boundary effects in a high performance 65nm SOI technology with dual etch stop layer (dESL) stressors. 1D geometry effects, such as poly pitch dependence, and the implications on SPICE models and circuit desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33649abd039e0c65218d78c61cea5101
https://doi.org/10.1109/vlsit.2006.1705217
https://doi.org/10.1109/vlsit.2006.1705217
Autor:
S. Filipiak, M. Foisy, John J. Hackenberg, Hsiao-chin Tuan, Xiang-Zheng Bo, Venkat R. Kolagunta, Konstantin V. Loiko, Li-te Lin, Jon Cheek, Paul A. Grudowski, D. Tekleab, Chi-hsi Wu, Vance H. Adams, K.h. Fung
Publikováno v:
2006 IEEE international SOI Conferencee Proceedings.
We report on the optimized transverse and lateral boundaries of dual etch stop layer (dESL) stressors in both PMOS and NMOS achieved in 65nm SOI transistors. We demonstrate that this gives an additional ~20% performance gain in ring oscillators. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e04e380e001b0d73f4de7f4d79ff883
https://doi.org/10.1109/soi.2006.284411
https://doi.org/10.1109/soi.2006.284411
Autor:
White Ted, Suresh Venkatesan, Jack Grant, D. Eades, Greg Spencer, Mariam Sadaka, Bich-Yen Nguyen, R. Garcia, Jon D. Cheek, Nigel Cave, Pete Beckage, Mark D. Hall, Tom Kropewnicki, Stefan Zollner, John Norbert, Gauri Karve, John J. Hackenberg, Chungwei Lin, I-Lu Wu
Publikováno v:
ECS Meeting Abstracts. :1036-1036
Hole mobility is significantly higher for silicon MOSFETs with channels along a direction on the (110) plane than the usual (100) plane. Formation of (110) PMOS and (100) NMOS transistors is possible through use of Dual Substrate Orientation (DSO) in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7af75697e093e50c6aba6823fa909ef2
https://doi.org/10.1149/ma2006-02/20/1036
https://doi.org/10.1149/ma2006-02/20/1036
Autor:
John J. Hackenberg, Tery L. Barr
Publikováno v:
Applications of Surface Science. 10:523-545
X-ray photoelectron spectroscopy (ESCA) has been employed to study the oxidation of α-CuZn alloys in the range, 65%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf37bebb31bb5b4de5f25ed35444d219
https://doi.org/10.1016/0378-5963(82)90155-6
https://doi.org/10.1016/0378-5963(82)90155-6