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pro vyhledávání: '"John Hitt"'
Publikováno v:
2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop].
Make observations on HBT testing and how test conditions affect projected MTTF and Ea. Baseline bias stress data for TQS BiHEMT process active devices: HBT, D-mode pHEMT, E-mode pHEMT.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dcb542b531946c710ccecc250f53a3c
https://doi.org/10.1109/rocs.2008.5483622
https://doi.org/10.1109/rocs.2008.5483622
Publikováno v:
Chest. 132:444A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf8939efbe3149dc1745eb8c785986af
https://doi.org/10.1378/chest.132.4_meetingabstracts.444
https://doi.org/10.1378/chest.132.4_meetingabstracts.444