Zobrazeno 1 - 10
of 11
pro vyhledávání: '"John H. Slowik"'
Publikováno v:
Journal of Applied Physics. 53:550-556
A new technique has been developed which directly measures carrier transport through the interfacial region at metal‐semiconductor (M‐S) contacts. The injection current is determined by measuring with fast time resolution the initial rate of deca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c94ce89f7d3e1517be476247d5f846f
https://doi.org/10.1063/1.329917
https://doi.org/10.1063/1.329917
Publikováno v:
Journal of Vacuum Science and Technology. 20:233-236
A study of metal–organic semiconductor interfaces has been undertaken. This article is devoted to aluminum–phthalocyanine (H2Pc) interfaces. The interfaces were characterized by surface photovoltage spectroscopy (SPS) and x‐ray photoelectron sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6303dd935387aa9b0439bdeedcedee40
https://doi.org/10.1116/1.571363
https://doi.org/10.1116/1.571363
Autor:
John H. Slowik
Publikováno v:
Physical Review B. 10:416-431
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e17d0aaa1a32cec7d764d44b73d1539
https://doi.org/10.1103/physrevb.10.416
https://doi.org/10.1103/physrevb.10.416
Publikováno v:
Physical Review B. 10:432-447
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::070d0ee71ae6d9010ba5987a89dbf2eb
https://doi.org/10.1103/physrevb.10.432
https://doi.org/10.1103/physrevb.10.432
Autor:
John H. Slowik
Publikováno v:
Journal of Applied Physics. 47:2982-2987
Thermally stimulated current (TSC) data for PVK are interpreted according to a model which is independent of the distinction between hopping conduction and band transport. Although TSC structure shifts with both heating rate and applied field, the ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3e2e543733cffdfc40e7386fc250e68
https://doi.org/10.1063/1.323039
https://doi.org/10.1063/1.323039
Acceptorlike electron traps and thermally reversible barrier heights for Al on UHV‐cleaved (110) InP
Publikováno v:
Journal of Applied Physics. 58:3154-3161
Temperature‐dependent current‐voltage (I‐V) and capacitance‐voltage (C‐V) measurements reveal that a low but nonzero barrier is present at the interface of Al deposited on ultrahigh‐vacuum‐cleaved n‐InP (110), and that the true barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77975ab61c8cbad441125ab631f7f511
https://doi.org/10.1063/1.335820
https://doi.org/10.1063/1.335820
Autor:
John H. Slowik, Inan Chen
Publikováno v:
Journal of Applied Physics. 54:4467-4473
A calculation of intermolecular transfer integrals J for carbazole molecules shows that J varies by orders of magnitude when the molecular planes are rotated. The angular variation of J is used to estimate the corresponding changes in the transition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::898eaa2dd40b8a2c899dac23614e3eaf
https://doi.org/10.1063/1.332644
https://doi.org/10.1063/1.332644
Autor:
Frederick C. Brown, John H. Slowik
Publikováno v:
Physical Review Letters. 29:934-937
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::517c624dece1b9fa9c13348221bd0799
https://doi.org/10.1103/physrevlett.29.934
https://doi.org/10.1103/physrevlett.29.934
Autor:
John H. Slowik
Publikováno v:
Applied Physics Letters. 38:269-271
A new technique has been developed for resolving detailed characteristics of charge injection across metal‐semiconductor and other interfaces. This time‐resolved charge injection technique uses 0–3 kV pulses, switched at 8 ns, to probe injectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c62872d05a5aa01d5ca92de8050d24d
https://doi.org/10.1063/1.92302
https://doi.org/10.1063/1.92302
Autor:
S. Ashok, John H. Slowik
Publikováno v:
Applied Physics Letters. 49:1784-1786
Sequential implantation of Ar and low‐energy H produces a high (0.83 eV), near‐ideal Schottky barrier for Al deposited on p‐Si. Deep level transient spectroscopy (DLTS) measurements reveal majority‐carrier interfacial traps due to the implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d360347203a6dd505dcbf3c71c5c037f
https://doi.org/10.1063/1.97244
https://doi.org/10.1063/1.97244