Zobrazeno 1 - 10
of 205
pro vyhledávání: '"John H. English"'
Publikováno v:
Journal of Vacuum Science & Technology A. 37:061502
Boron is a difficult material to use in a molecular beam epitaxy (MBE) reactor due to its high melting point as a pure compound. Consequently, there is interest in exploring alternative sources for B in MBE. In this paper, the authors detail the cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4276f61821935a7711f2818636d0500f
https://doi.org/10.1116/1.5117240
https://doi.org/10.1116/1.5117240
Autor:
Richard Cramer, Bastien Bonef, James S. Speck, Cyrus E. Dreyer, Chris G. Van de Walle, John H. English
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:041509
Incorporating boron into gallium nitride to make BxGa1-xN solid solutions would create an avenue for extreme alloys due to the fact that wurtzite phase BN has a larger band gap and smaller lattice parameters compared to GaN. In this paper, the author
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65b56686960ffa211d6220e15f46500e
https://doi.org/10.1116/1.4986185
https://doi.org/10.1116/1.4986185
Publikováno v:
Physical Review B. 53:1054-1057
Using local spectroscopy, we study the far-infrared response of edge channels in the quantum Hall regime. Both nonresonant and resonant excitations are observed. The resonant signal is shifted with respect to the cyclotron resonance in the two-dimens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c91daad94c78e89c265efcfb8fbac0e
https://doi.org/10.1103/physrevb.53.1054
https://doi.org/10.1103/physrevb.53.1054
Publikováno v:
Solid-State Electronics. 40:421-424
Using different techniques to individually contact two closely spaced electron gases, we study the tunneling characteristics between weakly coupled GaAs quantum wells, with and without resonant far-infrared excitation. We find that for barriers as th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53c1d69d11f4c9d98c8b6153f56eb8e0
https://doi.org/10.1016/0038-1101(95)00302-9
https://doi.org/10.1016/0038-1101(95)00302-9
Publikováno v:
Journal of Crystal Growth. 127:845-848
Current transport in Nb-(InAs-AlSb quantum well)-Nb structures below the transition temperature of the Nb electrodes depends strongly on the electron concentration and mobility of the InAs layer. In the present paper we report (a) an improved nucleat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6adf9c5035fefdfd4f54d37d71c794f9
https://doi.org/10.1016/0022-0248(93)90745-i
https://doi.org/10.1016/0022-0248(93)90745-i
Publikováno v:
Journal of Crystal Growth. 127:908-912
Quasi-periodic facetting has been observed during high temperature, molecular beam epitaxial-growth of AlAs and AlAs/GaAs superlattices. The facetting is shown to be related to the thickness of the AlAs epilayers and is unrelated to the number of int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31cabdd231bf54ec58c349bf881d7f3e
https://doi.org/10.1016/0022-0248(93)90758-o
https://doi.org/10.1016/0022-0248(93)90758-o
Autor:
Colombo R. Bolognesi, J. J. Pekarik, Berinder Brar, Herbert Kroemer, John H. English, Chanh Nguyen
Publikováno v:
Journal of Electronic Materials. 22:255-258
Low-temperature mobilities in InAs-AlSb quantum wells depend sensitively on the buffer layer structures. Reflection high energy electron diffraction and x-ray diffraction show that the highest crystalline quality and best InAs transport properties ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c62a5a0f261634b594ed03505069fef5
https://doi.org/10.1007/bf02665035
https://doi.org/10.1007/bf02665035
Autor:
Herbert Kroemer, Jörg P. Kotthaus, Chanh Nguyen, Achim Wixforth, J. Scriba, C R Bolognesi, G. Tuttle, John H. English
Publikováno v:
Semiconductor Science and Technology. 8:S133-S136
Electron cyclotron resonance is studied in very deep quantum wells consisting of InAs between AlSb barriers. High electron mobility and strong conduction band non-parabolicity together with the small effective mass and the large effective g factor of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ecd4d0b577757ffc2e8f61869e794a81
https://doi.org/10.1088/0268-1242/8/1s/030
https://doi.org/10.1088/0268-1242/8/1s/030
Publikováno v:
Solid State Communications. 80:673-676
We study the anisotropy of the response of a two-dimensional electron gas confined laterally in elliptic geometry at microwave frequencies. In contrast to circular disks the lowest dipole mode is split at zero magnetic field. The resonance positions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::493f99895e2a3095e82706dc31d04efa
https://doi.org/10.1016/0038-1098(91)90885-y
https://doi.org/10.1016/0038-1098(91)90885-y
Autor:
Arthur C. Gossard, David A. B. Miller, Gabriela Livescu, John Cunningham, A. M. Fox, W. H. Knox, T. Sizer, John H. English
Publikováno v:
Semiconductor Science and Technology. 5:549-556
Clear evidence for resonant tunnelling of electrons in a p-i-n quantum well modulator is provided by picosecond pump-and-probe electro-absorption measurements. The temperature-independent escape times show a drastic reduction when an electrical field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e0e1108658846d29a41ae4ad3362cf
https://doi.org/10.1088/0268-1242/5/6/015
https://doi.org/10.1088/0268-1242/5/6/015