Zobrazeno 1 - 10
of 86
pro vyhledávání: '"John H. Dinan"'
Autor:
R. Hellmer, T. D. Golding, Jeffrey M. Peterson, M. Jaime-Vasquez, David R. Rhiger, M. Carmody, J. D. Benson, John H. Dinan, Priyalal Wijewarnasuriya, M. F. Vilela, D.F. Lofgreen, L. A. Almeida, Andrew J. Stoltz, L. O. Bubulac, Scott M. Johnson, M.F. Lee, R. N. Jacobs, A. Wang, Li Wang
Publikováno v:
Journal of Electronic Materials. 40:280-288
A model is proposed to explain disparities found in the operability values and histograms for long-wavelength infrared HgCdTe focal-plane arrays fabricated on Si substrates compared with those fabricated on CdZnTe. The starting point for the model is
Publikováno v:
Journal of Electronic Materials. 36:832-836
Reverse current in diodes can be dominated by generation processes, depending exponentially on temperature according to the rate-limiting step in the generation process. In this report, the current-voltage-temperature (IVT) relationship is analyzed f
Autor:
Yuanping Chen, Nibir K. Dhar, M. Carmody, D. D. Edwall, L. A. Almeida, Jose M. Arias, John H. Dinan, R. N. Jacobs, M. Groenert, Jon Ellsworth, G. Brill
Publikováno v:
Journal of Electronic Materials. 36:1098-1105
It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier mobility (μ e) and minority carrier lifetime (τ), are qualitatively comparable to those rep
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1684-1689
A vacuum compatible lithography technique has recently been demonstrated, whereby amorphous hydrogenated silicon (a-Si:H) films are used as a resist. Following plasma deposition of the a-Si:H film, poly-Si patterns are generated on the surface by exc
Publikováno v:
Journal of Electronic Materials. 35:1214-1218
An empirical study is reported, wherein HgCdTe was deposited simultaneously on multiple CdZnTe substrates of different orientations by molecular beam epitaxy. These orientations included the following vicinal surfaces: (115)B, (113)B, (112)B, and (55
Autor:
T. D. Golding, L. Wang, H. O. Sankur, L. O. Bubulac, D. D. Edwall, W. Zhao, John H. Dinan, R. Hellmer, M. Carmody
Publikováno v:
Journal of Electronic Materials. 35:1465-1469
Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic e
Publikováno v:
Journal of Electronic Materials. 35:1443-1448
We have examined the formation and removal of native surface films on Hg1−xCdxTe (n-type, x=0.2). Samples were etched with a Br-based solution and then characterized by spectroscopic ellipsometry and X-ray photoelectron spectroscopy. A second set o
Autor:
Silviu Velicu, James W. Garland, C. Fulk, S. Sivananthan, L. O. Bubulac, Paul Boieriu, John H. Dinan, Andrew J. Stoltz, C. H. Grein
Publikováno v:
Journal of Electronic Materials. 35:1385-1390
We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si. Annealed and as-grown epilayers, in situ doped with indium, were exposed to a hydrogen plasma generated in an electron cyclotro
Autor:
P. R. Boyd, M. Jaime-Vasquez, Lourdes Salamanca-Riba, R. N. Jacobs, John H. Dinan, Andrew J. Stoltz, J. K. Markunas, L. A. Almeida, E. W. Robinson
Publikováno v:
Journal of Electronic Materials. 35:1474-1480
A vacuum-compatible process for carrying out lithography on Hg1−xCdxTe and CdTe films was previously demonstrated. It was shown that hydrogenated amorphous silicon (a-Si:H) could be used as a dry resist by projecting a pattern onto its surface usin
Autor:
G. Brill, John H. Dinan, Jose M. Arias, L. A. Almeida, Yuanping Chen, J. G. Pasko, Robert B. Bailey, Nibir K. Dhar, M. Carmody, D. D. Edwall, M. Groenert
Publikováno v:
Journal of Electronic Materials. 35:1417-1422
We have fabricated a series of 256 pixel×256 pixel, 40 µm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientifi